X-On Electronics has gained recognition as a prominent supplier of NTD6414ANT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD6414ANT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD6414ANT4G ON Semiconductor

NTD6414ANT4G electronic component of ON Semiconductor
NTD6414ANT4G ON Semiconductor
NTD6414ANT4G MOSFETs
NTD6414ANT4G  Semiconductors

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See Product Specifications
Part No. NTD6414ANT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: N-Channel 100 V 32A (Tc) 100W (Tc) Surface Mount DPAK
Datasheet: NTD6414ANT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
262: USD 0.9954 ea
Line Total: USD 260.79 
Availability - 2258
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ: 262  Multiples: 1
Pack Size: 1
Availability Price Quantity
2258
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 204
Multiples : 1
204 : USD 1.277
262 : USD 0.9954
264 : USD 0.9854
273 : USD 0.9534
283 : USD 0.9213
500 : USD 0.855
1000 : USD 0.8241

2258
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 262
Multiples : 1
262 : USD 0.9954
264 : USD 0.9854
273 : USD 0.9534
283 : USD 0.9213
500 : USD 0.855
1000 : USD 0.8241

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the NTD6414ANT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD6414ANT4G and other electronic components in the MOSFETs category and beyond.

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NTD6414AN, NVD6414AN MOSFET Power, N-Channel 100 V, 32 A, 37 m Features NTD6414AN, NVD6414AN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 107 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I A T = 25C 1.0 DSS J V = 0 V, GS V = 100 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Negative Threshold Temperature V /T 8.3 mV/C GS(TH) J Coefficient DraintoSource OnResistance R V = 10 V, I = 32 A 30 37 m DS(on) GS D Forward Transconductance gFS V = 5.0 V, I = 10 A 18 S GS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 1450 pF ISS Output Capacitance C V = 0 V, f = 1.0 MHz, V = 25 V 230 OSS GS DS Reverse Transfer Capacitance C 95 RSS Total Gate Charge Q 40 nC G(TOT) Threshold Gate Charge Q 1.7 G(TH) GatetoSource Charge Q 8.0 V = 10 V, V = 80 V, I = 32 A GS GS DS D GatetoDrain Charge Q 20 GD Plateau Voltage V 5.9 V GP Gate Resistance R 1.9 G SWITCHING CHARACTERISTICS (Note 4) ns TurnOn Delay Time t 11 d(on) Rise Time t 52 r V = 10 V, V = 80 V, GS DD I = 32 A, R = 6.1 TurnOff Delay Time t D G 38 d(off) Fall Time t 48 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.87 1.2 V SD J V = 0 V, I = 32 A GS S T = 125C 0.76 J Reverse Recovery Time t 68 ns RR Charge Time T 51 a V = 0 V, dI /dt = 100 A/ s, GS S I = 32 A Discharge Time T S 16 b Reverse Recovery Charge Q 195 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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