X-On Electronics has gained recognition as a prominent supplier of NTD6414AN-1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD6414AN-1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD6414AN-1G ON Semiconductor

NTD6414AN-1G electronic component of ON Semiconductor
NTD6414AN-1G ON Semiconductor
NTD6414AN-1G MOSFETs
NTD6414AN-1G  Semiconductors

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See Product Specifications
Part No. NTD6414AN-1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET IPAK 100V 29A 38MOHM
Datasheet: NTD6414AN-1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8846 ea
Line Total: USD 0.88 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 06 Jun to Thu. 12 Jun
MOQ : 1
Multiples : 1
1 : USD 0.8846
25 : USD 0.4805
100 : USD 0.3365
500 : USD 0.3241
1000 : USD 0.3117
2500 : USD 0.3003

0
Ship by Fri. 06 Jun to Thu. 12 Jun
MOQ : 75
Multiples : 1
75 : USD 1.3385
150 : USD 1.1197
300 : USD 0.9073
525 : USD 0.7722
1050 : USD 0.6821

0
Ship by Fri. 06 Jun to Thu. 12 Jun
MOQ : 629
Multiples : 629
629 : USD 0.6691

0
Ship by Fri. 06 Jun to Thu. 12 Jun
MOQ : 820
Multiples : 1
820 : USD 0.3521
1000 : USD 0.3251
2500 : USD 0.3132

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Configuration
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTD6414AN-1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD6414AN-1G and other electronic components in the MOSFETs category and beyond.

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NTD6414AN, NVD6414AN N-Channel Power MOSFET 100 V, 32 A, 37 m Features Low R DS(on) High Current Capability NTD6414AN, NVD6414AN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 107 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 100 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Negative Threshold Temperature V /T 8.3 mV/C GS(TH) J Coefficient DraintoSource OnResistance R V = 10 V, I = 32 A 30 37 m DS(on) GS D Forward Transconductance gFS V = 5.0 V, I = 10 A 18 S GS D CHARGES, CAPACITANCES AND GATE RESISTANCE pF Input Capacitance C 1450 ISS Output Capacitance C 230 V = 0 V, f = 1.0 MHz, V = 25 V OSS GS DS Reverse Transfer Capacitance C 95 RSS Total Gate Charge Q 40 nC G(TOT) Threshold Gate Charge Q 1.7 G(TH) GatetoSource Charge Q V = 10 V, V = 80 V, I = 32 A 8.0 GS GS DS D GatetoDrain Charge Q 20 GD Plateau Voltage V 5.9 V GP Gate Resistance R 1.9 G SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 11 ns d(on) Rise Time t 52 r V = 10 V, V = 80 V, GS DD I = 32 A, R = 6.1 Turn Off Delay Time t D G 38 d(off) Fall Time t 48 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.87 1.2 V SD J V = 0 V, I = 32 A GS S T = 125C 0.76 J Reverse Recovery Time t 68 ns RR Charge Time T 51 a V = 0 V, dI /dt = 100 A/ s, GS S I = 32 A S Discharge Time T 16 b Reverse Recovery Charge Q 195 nC RR 2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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