X-On Electronics has gained recognition as a prominent supplier of NTD6415AN-1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD6415AN-1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD6415AN-1G ON Semiconductor

NTD6415AN-1G electronic component of ON Semiconductor
NTD6415AN-1G ON Semiconductor
NTD6415AN-1G MOSFETs
NTD6415AN-1G  Semiconductors

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See Product Specifications
Part No. NTD6415AN-1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET IPAK 100V 22A 55MOHM
Datasheet: NTD6415AN-1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
682: USD 0.6166 ea
Line Total: USD 420.52 
Availability - 0
MOQ: 682  Multiples: 682
Pack Size: 682
Availability Price Quantity
0
Ship by Tue. 24 Jun to Mon. 30 Jun
MOQ : 75
Multiples : 1
75 : USD 1.1455
150 : USD 1.0231
300 : USD 0.888
525 : USD 0.7979
975 : USD 0.7336

0
Ship by Tue. 24 Jun to Mon. 30 Jun
MOQ : 682
Multiples : 682
682 : USD 0.6166

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Qg - Gate Charge
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTD6415AN-1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD6415AN-1G and other electronic components in the MOSFETs category and beyond.

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NTD6415AN, NVD6415AN N-Channel Power MOSFET 100 V, 23 A, 55 m Features Low R DS(on) High Current Capability NTD6415AN, NVD6415AN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 113 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 100 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Negative Threshold Temperature V /T 7.6 mV/C GS(TH) J Coefficient DraintoSource OnResistance R V = 10 V, I = 23 A 47 55 m DS(on) GS D Forward Transconductance g V = 5 V, I = 10 A 13 S FS GS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 700 pF ISS Output Capacitance C V = 0 V, f = 1.0 MHz, V = 25 V 110 OSS GS DS Reverse Transfer Capacitance C 52 RSS Total Gate Charge Q 29 nC G(TOT) Threshold Gate Charge Q 1.2 G(TH) GatetoSource Charge Q V = 10 V, V = 80 V, I = 23 A 5 GS GS DS D GatetoDrain Charge Q 14.6 GD Plateau Voltage V 5.7 V GP Gate Resistance R 2.3 G SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 10 ns d(on) Rise Time t 37 r V = 10 V, V = 80 V, GS DD I = 23 A, R = 6.1 Turn Off Delay Time t D G 30 d(off) Fall Time t 37 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.83 1.2 V SD J V = 0 V, I = 23 A GS S T = 125C 0.68 J Reverse Recovery Time t 65 ns RR Charge Time T 46 a V = 0 V, dI /dt = 100 A/ s, GS S I = 23 A S Discharge Time T 19 b Reverse Recovery Charge Q 176 nC RR 2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Package Shipping NTD6415ANT4G DPAK 2500 / Tape & Reel (Pb Free) NTD6415AN 1G IPAK 75 Units / Rail (Pb Free) NVD6415ANT4G DPAK 2500 / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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