NTE2371 NTE

NTE2371 MOSFET PCh, Enhancement Mode High Speed Switch TO220 Type Package D Features: Dynamic dv/dt Rating Repetitive Avalanche Rated PChannel Fast Switching G Ease of Paralleling Simple Drive Requirements S Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C ................................................................. 19A C T = +100 C ................................................................. 13A C Pulsed Drain Current (Note 1), I ................................................... 72A DM Power Dissipation (T = +25 C), P ................................................ 150W C D Derate Linearly Above 25 C ............................................... 1.0W/ C GatetoSource Voltage, V ....................................................... 20 GS Single Pulse Avalanche Energy (Note 2), E ....................................... 640mJ AS Avalanche Current (Note 1), I ...................................................... 19A AR Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 5.5V/ns Operating Junction Temperature Range, T .................................. 55 to +175 C J Storage Temperature Range, T .......................................... 55 to +175 C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Mounting Torque (6 32 or M3 Screw) .................................... 10 lbf in (1.1N m) Thermal Resistance, Junction toCase, R ..................................... 1.0 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 62 C/W thJA Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ............ 0.5 C/W thCS Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 2. V = 25V, starting T = +25 C, L = 2.7mH, R = 25 , I = 19A DD J G AS Note 3. I 19A, di/dt 200A/ s, V V , T +175 C SD DD (BR)DSS J Note 4. Pules Width 300 s, Duty Cycle 2%. Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DraintoSource Breakdown Voltage V V = 0V, I = 250 A 100 V (BR)DSS GS D Breakdown Voltage Temp. Coefficient V Reference to +25 C, I = 1mA 0.087 V/ C (BR)DSS D T J Static DraintoSource OnResistance R V = 10V, I = 11A, Note 4 0.20 DS(on) GS D Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Forward Transconductance g V = 50V, I = 11A, Note4 6.2 mhos fs DS D DraintoSource Leakage Current I V = 100V, V = 0V 100 A DSS DS GS V = 80V, V = 0V, T = +150 C 500 A DS GS J GatetoSource Forward Leakage I V = 20V 100 nA GSS GS GatetoSource Reverse Leakage I V = 20V 100 nA GSS GS Total Gate Charge Q I = 19A, V = 80V, V = 10V, 61 nC g D DS GS Note 4 GatetoSource Charge Q 14 nC gs GatetoDrain (Miller) Charge Q 29 nC gd TurnOn Delay Time t 16 ns V = 50V, I = 19A, R = 9.1 , d(on) DD D G R = 2.4 , Note 4 D Rise Time t 73 ns r TurnOff Delay Time t 34 ns d(off) Fall Time t 57 ns f Internal Drain Inductance L Between lead, .250in. (6.0) mm from 4.5 nH D package and center of die contact Internal Source Inductance L 7.5 nH S Input Capacitance C 1400 pF V = 0V, V = 25V, f = 1MHz iss GS DS Output Capacitance C 590 pF oss Reverse Transfer Capaticance C 140 pF rss SourceDrain Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I 19 A S Pulsed Source Current (Body Diode) I Note 1 72 A SM Diode Forward Voltage V T = +25 C, I = 3.5A, V = 0V, 5.0 V SD J S GS Note 3 Reverse Recovery Time t 130 260 ns T = +25 C, I = 3.5A, rr J F di/dt = 100A/ s, Note 3 Reverse Recovery Charge Q 0.35 0.70 C rr Forward TurnOn Time t Intrinsic turnon time is neglegible (turnon is dominated by L +L ) on S D Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 4. Pulse width 300 s duty cycle 2%.