NTE2390 MOSFET NChannel Enhancement Mode, High Speed Switch Description: The NTE2390 is an NChannel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. D Features: Silicon Gate for Fast Switching Speeds I , V , V , and SOA Specified at Elevated Temperatures. DSS DC(on) GS(th) Rugged SOA is Power Dissipation Limited G Source toDrain Diode Characterized for Use With Inductive Loads S Absolute Maximum Ratings: DrainSource Voltage, V ......................................................... 60V DSS DrainGate Voltage (R = 1M ), V .............................................. 60V GS DGR GateSource Voltage, V ......................................................... 20V GS Drain Current, I D Continuous .................................................................. 12A Pulsed ...................................................................... 30A Total Power Dissipation (T = +25 C), P ............................................ 75W C D Derate Above 25 C ....................................................... 0.6W/ C Operating Junction Temperature Range, T .................................. 65 to +150 C J Storage Temperature Range, T .......................................... 65 to +150 C stg Maximum Thermal Resistance, Junction toCase, R ........................... 1.67 C/W thJC Maximum Thermal Resistance, Junction toAmbient, R ......................... 30 C/W thJA Maximum Lead Temperature (During soldering), T .................................. +275 C L Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics DrainSource Breakdown Voltage V I = 0.25mA, V = 0 60 V (BR)DSS D GS ZeroGate Voltage Drain Current I V = 0, V = Max Rating 0.2 mA DSS GS DS V = 0, V = 48V, T = +125 C 1.0 mA GS DS J GateBody Leakage Current, Forward I V = 0, V = 20V 100 nA GSSF DS GSF GateBody Leakage Current, Reverse I V = 0, V = 20V 100 nA GSSR DS GSR ON Characteristics (Note 1) Gate Threshold Voltage V V = V , I = 1mA 2.0 4.5 V GS(th) DS GS D V = V , I = 1mA, T = +100 C 1.5 4.0 V DS GS D J Static DrainSource On Resistance r V = 10V, I = 6A 0.2 DS(on) GS D DrainSource ONVoltage V V = 10V, I = 12A 3.0 V DS(on) GS D V = 10V, I = 6A, T = 100 C 2.8 V GS D J Forward Transconductance g V = 15V, I = 6A 4 mhos fs DS D Dynamic Characteristics Input Capacitance C 400 pf V = 25V, V = 0, iss DS GS f = 1MHz Output Capacitance C 300 pf oss Reverse Transfer Capacitance C 100 pf rss Switching Characteristics (T = +100 C, Note 1) J TurnOn Time t V = 25V, I = 0.5 Rated I , 60 ns d(on) DD D D R = 50 gen Rise Time t 160 ns r TurnOff Delay Time t 80 ns d(off) Fall Time t 110 ns f Total Gate Charge Q V = 48V, V = 10V, 13 26 nC g DS GS I = Rated I D D GateSource Charge Q 6 nC gs GateDrain Charge Q 7 nC gd Source Drain Diode Characteristics (Note 1) Forward ON Voltage V I = Rated I , V = 0 1.8 3.2 V SD S D GS Forward TurnOn Time t Limited by stray inductance on Reverse Recovery Time t 300 ns rr Internal Package Inductance Internal Drain Inductance L Measured from the contact screw 3.5 nH d on tab to center of die Measured from the drain lead 0.25 4.5 nH from package to center of die Internal Source Inductance L Measured from the source lead 7.5 nH s 0.25 from package to source bond pad Note 1. Pulse test: Pulse width 300 s, Duty cycle 2%.