DATA SHEET www.onsemi.com MOSFET - N-Channel, V R MAX I MAX DSS DS(ON) D 650 V 19.3 m 10 V 75 A SUPERFET III, FAST 650 V, 19.3 m , 75 A D NTHL019N65S3H Description SUPERFET III MOSFET is onsemis brandnew high voltage superjunction (SJ) MOSFET family that is utilizing charge balance G technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and S withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET FAST series helps minimize various power systems and improve system efficiency. Features 700 V T = 150C J Typ. R = 15 m DS(on) G Ultra Low Gate Charge (Typ. Q = 282 nC) D g S Low Effective Output Capacitance (Typ. C = 2495 pF) oss(eff.) TO247 Long Leads 100% Avalanche Tested CASE 340CX These Devices are PbFree and are RoHS Compliant MARKING DIAGRAM Applications Telecom / Server Power Supplies Industrial Power Supplies EV Charger AYWWZZ UPS / Solar T019N 65S3H T019N65S3H = Specific Device Code A = Assembly Plant Code YWW = Data Code (Year & Week) ZZ = Lot ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: January, 2022 Rev. 1 NTHL019N65S3H/DNTHL019N65S3H ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 75 A D C Continuous (T = 100C) 73 C I Drain Current Pulsed (Note 1) 328 A DM E Single Pulsed Avalanche Energy (Note 2) 1421 mJ AS I Avalanche Current (Note 2) 12.5 A AS E Repetitive Avalanche Energy (Note 1) 6.25 mJ AR dv/dt MOSFET dv/dt 120 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 625 W D C Derate Above 25C 5.0 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 260 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 12.5 A, R = 25 , starting T = 25C. AS G J 3. I 37.5 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.20 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NTHL019N65S3H T019N65S3H TO247 Tube N/A N/A 30 Units www.onsemi.com 2