Product Information

STGB20V60DF

STGB20V60DF electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1000
Multiples : 1000

Stock Image

STGB20V60DF
STMicroelectronics

1000 : USD 1.2027
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

STGB20V60DF
STMicroelectronics

1 : USD 6.1619
10 : USD 2.2265
25 : USD 2.0919
N/A

Obsolete
0 - WHS 3

MOQ : 1000
Multiples : 1000

Stock Image

STGB20V60DF
STMicroelectronics

1000 : USD 1.265
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features TAB TAB Maximum junction temperature: T = 175 C J Very high speed switching series 3 3 2 Tail-less switching off 1 1 Low saturation voltage: V = 1.8 V (typ.) CE(sat) TO-220 DPAK I = 20 A C TAB Tight parameters distribution Safe paralleling Low thermal resistance 3 3 2 2 Very fast soft recovery antiparallel diode 1 1 Lead free package TO-247 TO-3P Applications Figure 1. Internal schematic diagram Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGB20V60DF GB20V60DF DPAK Tape and reel STGP20V60DF GP20V60DF TO-220 Tube STGW20V60DF GW20V60DF TO-247 Tube STGWT20V60DF GWT20V60DF TO-3P Tube June 2013 DocID024360 Rev 3 1/23 This is information on a product in full production. www.st.com 23Contents STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 11 4 Package mechanical data 12 5 Packing mechanical data 20 6 Revision history . 22 2/23 DocID024360 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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