Product Information

STGB20V60F

Name: STGB20V60F
Brand: STMicroelectronics
SKU: STGB20V60F_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STGB20V60F electronic component of STMicroelectronics

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Datasheet

IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1000: USD 0.9996 ea
Line Total: USD 999.6

0 - Global Stock

MOQ: 1000 Multiples: 1000
Pack Size: 1000

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Wed. 22 May to Tue. 28 May MOQ : 1000 Multiples : 1000 STGB20V60F STMicroelectronics	1000 : USD 1.0303

0 - WHS 2 Ships to you between Tue. 28 May to Thu. 30 May MOQ : 1 Multiples : 1 STGB20V60F STMicroelectronics	1 : USD 5.2817 10 : USD 1.9056 25 : USD 1.802

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Additional Infomation About Product

STGB20V60F, STGP20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features Maximum junction temperature: T = 175 C J Very high speed switching series TAB TAB Tail-less switching off Low saturation voltage: V = 1.8 V (typ.) CE(sat) I = 20 A C 3 3 Tight parameters distribution 2 1 1 Safe paralleling 2 D PAK TO-220 Low thermal resistance Lead free package Applications Figure 1. Internal schematic diagram Photovoltaic inverters C (2, TAB) Uninterruptible power supply Welding Power factor correction Very high frequency converters G (1) Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging 2 STGB20V60F GB20V60F D PAK Tape and reel STGP20V60F GP20V60F TO-220 Tube July 2013 DocID024890 Rev 1 1/18 This is information on a product in full production. www.st.com 18Contents STGB20V60F, STGP20V60F Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 10 4 Package mechanical data 11 5 Packaging mechanical data 15 6 Revision history . 17 2/18 DocID024890 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Collector- Emitter Voltage VCEO Max 600 V 600 V
Collector-Emitter Saturation Voltage 1.8 V 1.8 V
Maximum Gate Emitter Voltage +/- 20 V +/- 20 V
Continuous Collector Current at 25 C 40 A 40 A
Gate-Emitter Leakage Current 250 nA 250 nA
Package / Case D2PAK D2PAK
Packaging Reel Reel
Technology Si Si
Mounting Style Smd/Smt Smd/Smt
Technology Si Si
Pd - Power Dissipation 167 W 167 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Series 600 - 650V Igbts 600 - 650V Igbts
Brand Stmicroelectronics Stmicroelectronics
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Igbt Transistors Igbt Transistors
Factory Pack Quantity : 1000 1000
Subcategory Igbts Igbts
Taric 8541290000 8541290000