NTMYS025N06CL Power MOSFET 60 V, 27.5 m , 21 A, Single NChannel Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Q and Capacitance to Minimize Driver Losses G LFPAK4 Package, Industry Standard These Devices are PbFree and are RoHS Compliant V R MAX I MAX (BR)DSS DS(ON) D MAXIMUM RATINGS (T = 25C unless otherwise noted) 27.5 m 10 V J 60 V 21 A Parameter Symbol Value Unit 43 m 4.5 V DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS D (5) Continuous Drain Steady T = 25C I 21 A C D Current R State JC T = 100C 12 (Notes 1, 2, 3) C Power Dissipation T = 25C P 24 W C D G (4) R (Notes 1, 2) JC T = 100C 7.6 C Continuous Drain Steady T = 25C I 8.5 A A D S (1,2,3) State Current R JA T = 100C 6.0 (Notes 1, 2, 3) A NCHANNEL MOSFET Power Dissipation T = 25C P 3.8 W A D R (Notes 1, 2) JA T = 100C 1.9 A MARKING Pulsed Drain Current T = 25C, t = 10 s I 103 A A p DM DIAGRAM Operating Junction and Storage Temperature T , T 55 to C J stg Range + 175 Source Current (Body Diode) I 20 A 025N06 S CL Single Pulse DraintoSource Avalanche E 44.6 mJ AS LFPAK4 AWLYW Energy (I = 1.5 A) L(pk) CASE 760AB Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) 025N06CL = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the A = Assembly Location device. If any of these limits are exceeded, device functionality should not be WL = Wafer Lot assumed, damage may occur and reliability may be affected. Y = Year THERMAL RESISTANCE MAXIMUM RATINGS W = Work Week Parameter Symbol Value Unit JunctiontoCase Steady State 6.0 C/W R JC ORDERING INFORMATION JunctiontoAmbient Steady State (Note 2) R 39.5 JA See detailed ordering, marking and shipping information on 1. The entire application environment impacts the thermal resistance values shown, page 5 of this data sheet. they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: March, 2019 Rev. 0 NTMYS025N06CL/DNTMYS025N06CL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 A DSS GS J V = 60 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 13 A 1.2 2.0 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V I = 7.5 A 22.9 27.5 m DS(on) GS D V = 4.5 V I = 7.5 A 35.8 43 GS D Forward Transconductance g V = 15 V, I = 10 A 20 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 330 pF ISS Output Capacitance C 172 V = 0 V, f = 1 MHz, V = 25 V OSS GS DS Reverse Transfer Capacitance C 5 RSS Total Gate Charge Q 5.8 nC G(TOT) Threshold Gate Charge Q 0.8 G(TH) V = 10 V, V = 48 V I = 7.5 A GS DS D GatetoSource Charge Q 1.3 GS GatetoDrain Charge Q 0.6 GD Total Gate Charge Q V = 4.5 V, V = 48 V I = 7.5 A 2.7 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 5 ns d(ON) Rise Time t 12.5 r V = 10 V, V = 48 V, GS DS I = 7.5 A, R = 1.0 D G TurnOff Delay Time t 14 d(OFF) Fall Time t 2.5 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.87 1.2 V SD J V = 0 V, GS I = 7.5 A S T = 125C 0.76 J Reverse Recovery Time t 18 ns RR Charge Time t 8.3 a V = 0 V, dIS/dt = 20 A/ s, GS I = 7.5 A S Discharge Time t 9.7 b Reverse Recovery Charge Q 7.5 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2