NTTFS6H850NL Power MOSFET 80 V, 8.6 m , 64 A, Single NChannel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are PbFree and are RoHS Compliant V R MAX I MAX (BR)DSS DS(on) D MAXIMUM RATINGS (T = 25C unless otherwise noted) J 8.6 m 10 V Parameter Symbol Value Unit 80 V 64 A DraintoSource Voltage V 80 V 11 m 4.5 V DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 64 A C D NChannel Current R JC T = 100C 45 D (5 8) (Notes 1, 2, 3, 4) C Steady State Power Dissipation T = 25C P 73 W C D R (Notes 1, 2, 3) JC T = 100C 37 C Continuous Drain T = 25C I 14.8 A G (4) D A Current R JA T = 100C 10.4 (Notes 1, 3, 4) A Steady S (1, 2, 3) State Power Dissipation P W T = 25C 3.9 A D R (Notes 1, 3) JA T = 100C 1.9 A MARKING DIAGRAM Pulsed Drain Current T = 25C, t = 10 s I 308 A C p DM 1 1 S D Operating Junction and Storage Temperature T , T 55 to C J stg XXXX WDFN8 S D Range +175 AYWW ( 8FL) S D Source Current (Body Diode) I 61 A S G D CASE 511AB Single Pulse DraintoSource Avalanche E 208 mJ AS Energy (I = 3.4 A) L(pk) XXXX = Specific Device Code A = Assembly Location Lead Temperature for Soldering Purposes T 260 C L Y = Year (1/8 from case for 10 s) WW = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the = PbFree Package device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit ORDERING INFORMATION JunctiontoCase Steady State (Note 3) R 2.0 C/W JC See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. JunctiontoAmbient Steady State (Note 3) R 39 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi ( ) is used as required per JESD51 12 for packages in which substantially less than 100% of the heat flows to single case surface. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: February, 2019 Rev. 0 NTTFS6H850NL/DNTTFS6H850NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 80 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 44.2 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 10 A DSS J V = 0 V, GS V = 80 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) DraintoSource On Resistance R V = 10 V, I = 10 A 7.1 8.6 m DS(on) GS D V = 4.5 V, I = 10 A 8.9 11 GS D Gate Threshold Voltage V V = V , I = 70 A 1.2 1.6 2.0 V GS(TH) GS DS D Gate Threshold Voltage Temperature V /T 5.2 mV/C GS(TH) J Coefficient Forward Transconductance g V = 8 V, I = 10 A 64.1 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1450 pF iss V = 0 V, f = 1.0 MHz GS Reverse Transfer Capacitance C 10 pF rss V = 40 V DS Output Capacitance C 182 pF oss Total Gate Charge Q V = 10 V, V = 40 V, I = 10 A 26 nC G(TOT) GS DS D Total Gate Charge Q 13 G(TOT) GatetoSource Charge Q 4.0 V = 4.5 V, V = 40 V, I = 10 A GS GS DS D GatetoDrain Charge Q 4.2 GD SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 9 ns d(on) TurnOff Delay Time t 21 d(off) V = 4.5 V, V = 64 V, GS DS I = 10 A, R = 2.5 m D G Rise Time t 26 r Fall Time t 5 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.2 V SD J V = 0 V, GS I = 10 A S T = 125C 0.7 J Reverse Recovery Time t 37 ns RR Charge Time t 22 a V = 0 V, dl/dt = 100 A/ s, GS I = 10 A S Discharge Time t 15 b Reverse Recovery Charge Q 40 nC RR 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2