NVBG080N120SC1 ON Semiconductor

Name: NVBG080N120SC1
Brand: ON Semiconductor
SKU: NVBG080N120SC1_ON_Semiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

NVBG080N120SC1 electronic component of ON Semiconductor

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NVBG080N120SC1 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVBG080N120SC1 SiC MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

Part No.	NVBG080N120SC1
Manufacturer:	ON Semiconductor
Category:	SiC MOSFETs
Description:	SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 80 mohm , 1200 V, M1, D2PAK-7L
Datasheet:	NVBG080N120SC1 Datasheet (PDF)

Price (USD)

1: USD 22.1242 ea
Line Total: USD 22.12

Availability : 0

Qty	Unit Price
1	$ 22.1242
10	$ 20.2882
30	$ 18.7446
100	$ 17.3965

NVBG080N120SC1 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Fri. 14 Nov to Thu. 20 Nov

MOQ : 800
Multiples : 800

Qty	Unit Price
800	$ 23.9008

Availability 0

Ship by Fri. 14 Nov to Thu. 20 Nov

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 22.1242
10	$ 20.2882
30	$ 18.7446
100	$ 17.3965

Availability 0

Ship by Wed. 12 Nov to Fri. 14 Nov

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 14.8654
10	$ 13.1109
25	$ 12.5724
100	$ 11.0811
500	$ 9.8591
800	$ 9.5795

We are delighted to provide the NVBG080N120SC1 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVBG080N120SC1 and other electronic components in the SiC MOSFETs category and beyond.

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Additional Infomation About Product

The ON Semiconductor NVBG080N120SC1 is an N-channel silicon carbide MOSFET housed in a D2PAK-7L package. It features a 1200V maximum drain-source voltage, a drain-gate voltage range of 10V to 20V, and an 80mO drain current for improved power efficiency and low losses. The device is designed for high-speed switching applications with low gate-charge requirements and minimal gate drive requirements, and is suitable for use in a variety of applications including inverter motor control, power factor correction, industrial induction heating, and power supplies. The device comes with a wide operating temperature range and superior thermal performance for reliable operation.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Aptina / ON Semiconductor may also be referenced as

FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
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Manufacturer ON Semiconductor ON Semiconductor
Product Category SiC MOSFETs SiC MOSFETs
Mounting Style SMD/SMT SMD/SMT
Transistor Polarity N - Channel N - Channel
Number of Channels 1 Channel 1 Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV 1.2 kV
Id - Continuous Drain Current 30 A 30 A
Rds On - Drain-Source Resistance 110 mOhms 110 mOhms
Vgs - Gate-Source Voltage - 15 V , + 25 V - 15 V , + 25 V
Vgs th - Gate-Source Threshold Voltage 4.3 V 4.3 V
Qg - Gate Charge 56 nC 56 nC
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 179 W 179 W
Channel Mode Enhancement Enhancement
Qualification AEC - Q101 AEC - Q101
Tradename EliteSiC EliteSiC
Package / Case D2PAK - 7 D2PAK - 7

NVBG080N120SC1 ON Semiconductor

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