NVH4L060N090SC1 ON Semiconductor

NVH4L060N090SC1 electronic component of ON Semiconductor
NVH4L060N090SC1 ON Semiconductor
NVH4L060N090SC1 SiC MOSFETs
NVH4L060N090SC1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NVH4L060N090SC1 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVH4L060N090SC1 SiC MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

Part No. NVH4L060N090SC1
Manufacturer: ON Semiconductor
Category: SiC MOSFETs
Description: SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 60 mohm, 900 V, M2, TO247-4L
Datasheet: NVH4L060N090SC1 Datasheet (PDF)
Price (USD)
1: USD 17.7222 ea
Line Total: USD 17.72 
Availability : 0
  
QtyUnit Price
1$ 17.7222
10$ 16.6642
30$ 16.2606
90$ 15.9074

Availability 0
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 450
Multiples : 450
QtyUnit Price
450$ 27.2633


Availability 0
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 17.7222
10$ 16.6642
30$ 16.2606
90$ 15.9074


Availability 0
Ship by Thu. 13 Nov to Mon. 17 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 14.1211
10$ 12.4688
25$ 11.951
100$ 10.5322
450$ 9.3516

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Package / Case
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NVH4L060N090SC1 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVH4L060N090SC1 and other electronic components in the SiC MOSFETs category and beyond.

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The NVH4L060N090SC1 is a MOSFET SIC (Silicon Carbide) MOSFET from ON Semiconductor with a 900V drain-source voltage rating and a maximum drain current of 32A. This MOSFET has a TO-247-4L package and a typical on-resistance of 60mOhm. This part is suited for high temperature applications up to +175°C, making it an ideal choice for automotive and industrial designs which require higher temperature stability and better performance. This part features Low Power Loss, High Efficiency and Fast switching speeds, making it ideal for Power Management and Voltage Regulation applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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