X-On Electronics has gained recognition as a prominent supplier of NVMFS5832NLT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVMFS5832NLT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVMFS5832NLT1G ON Semiconductor

NVMFS5832NLT1G electronic component of ON Semiconductor
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Part No.NVMFS5832NLT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET Power MOSFET 40V, 120A, 4.2 mOhm, Single N-Channel, SO8-FL, Logic Level.
Datasheet: NVMFS5832NLT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1500: USD 0.1744 ea
Line Total: USD 261.6 
Availability - 0
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1500
Multiples : 1500
1500 : USD 0.6976

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 617
Multiples : 1
617 : USD 0.5288

0
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1500
Multiples : 1500
1500 : USD 0.6977

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1500
Multiples : 1500
1500 : USD 0.1744

   
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We are delighted to provide the NVMFS5832NLT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVMFS5832NLT1G and other electronic components in the MOSFETs category and beyond.

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NVMFS5832NL Power MOSFET 40 V, 4.2 m , 120 A, Single NChannel Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G NVMFS5832NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 34.2 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 1 DSS GS J V = 40 V A DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.4 2.4 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 6.4 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 20 A 3.1 4.2 DS(on) GS D m V = 4.5 V I = 20 A 5.0 6.5 GS D Forward Transconductance g V = 15 V, I = 20 A 21 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 2700 ISS Output Capacitance C 360 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 250 RSS Total Gate Charge Q V = 4.5 V, V = 20 V I = 20 A 25 G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 20 V I = 20 A 51 G(TOT) GS DS D Threshold Gate Charge Q 2.0 nC G(TH) GatetoSource Charge Q 8.0 GS V = 4.5 V, V = 20 V I = 20 A GS DS D GatetoDrain Charge Q 12.7 GD Plateau Voltage V 3.2 V GP SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 13 d(ON) Rise Time t 24 r V = 4.5 V, V = 20 V, GS DS ns I = 10 A, R = 1.0 D G Turn Off Delay Time t 27 d(OFF) Fall Time t 8.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.73 1.2 SD J V = 0 V, GS V I = 5 A S T = 125C 0.57 J Reverse Recovery Time t 28.6 RR Charge Time t 14 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 10 A S Discharge Time t 14.5 b Reverse Recovery Charge Q 23.4 nC RR 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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