MOSFET - Power, DUAL COOL N-Channel, DFN8 5x6 40 V, 0.85 m , 316 A NVMFSC0D9N04CL www.onsemi.com Features Advanced Dualsided Cooled Packaging Small Footprint (5x6 mm) for Compact Design V R MAX I MAX (BR)DSS DS(ON) D Ulra Low R to Minimize Conduction Losses DS(on) 0.85 m 10 V Low Q and Capacitance to Minimize Driver Losses G 40 V 316 A AECQ101 Qualified and PPAP Capable 1.3 m 4.5 V These Devices are PbFree and are RoHS Compliant MSL1 Robust Packaging Design NChannel MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS Continuous Drain Steady T = 25C I 316 A C D Current R (Note 2) State JC T = 100C I 224 A C D Power Dissipation Steady T = 25C P 166 W C D R (Note 2) State JC T = 100C P 83 W C D Continuous Drain Steady T = 25C I 50 A A D Current R State JA T = 100C I 35 A (Notes 1, 2) A D Power Dissipation Steady T = 25C P 4.1 W A D R (Notes 1, 2) State JA T = 100C P 2.0 W A D Pulsed Drain Current T = 25C, t = 10 s I 900 A DM A p Operating Junction and Storage Temperature T , T 55 to C DFN8/DFNW8 (SO8FL) J stg Range +175 CASES 506EG & 507BC Source Current (Body Diode) I 138 A S MARKING DIAGRAM Single Pulse DraintoSource Avalanche E 706 mJ AS Energy (I = 29 A) L(pk) AYWWZZ Lead Temperature Soldering Reflow for Solder- T 300 C XXXXXX L ing Purposes (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. XXXXXX = Specific Device Code THERMAL RESISTANCE MAXIMUM RATINGS A = Assembly Location Parameter Symbol Value Unit Y = Year W = Work Week JunctiontoCase (Bottom) Steady State (Note 2) R 0.9 C/W JC ZZ = Lot Traceability JunctiontoCase (Top) Steady State (Note 2) 1.4 R JC JunctiontoAmbient Steady State (Note 2) R 37 JA ORDERING INFORMATION 2 1. Surfacemounted on FR4 board using a 1 in pad size, 1 oz Cu pad. See detailed ordering, marking and shipping information on 2. The entire application environment impacts the thermal resistance values shown, page 5 of this data sheet. they are not constants and are only valid for the particular conditions noted. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: February, 2021 Rev. 4 NVMFSC0D9N04CL/DNVMFSC0D9N04CL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / I = 250 A, ref to 25C 5 mV/C (BR)DSS D Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 A DSS GS J V = 40 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = +20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.2 2.0 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T I = 250 A, ref to 25C 8.6 mV/C GS(TH) J D DraintoSource On Resistance R V = 10 V I = 50 A 0.69 0.87 m DS(on) GS D V = 4.5 V I = 50 A 1.0 1.3 GS D CHARGES & CAPACITANCES Input Capacitance C V = 0 V, f = 1 MHz, V = 25 V 8860 pF ISS GS DS Output Capacitance C 3400 OSS Reverse Transfer Capacitance C 90 RSS Total Gate Charge Q V = 10 V, V = 20 V I = 50 A 135 nC G(TOT) GS DS D GatetoSource Charge Q 23 GS GatetoDrain Charge Q 17 GD Plateau Voltage V 2.9 V GP SWITCHING CHARACTERISTICS (Note 3) V = 10 V, V = 32 V, ns TurnOn Delay Time t 54 d(ON) GS DS I = 50 A, R = 2.5 D G Rise Time t 160 r TurnOff Delay Time t 220 d(OFF) Fall Time t 170 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.8 1.2 V SD GS J I = 50 A S T = 125C 0.65 J Reverse Recovery Time t V = 0 V, dI /dt = 100 A/ s, 91 ns RR GS S I = 50 A S Charge Time t 42 a Discharge Time t 49 b Reverse Recovery Charge Q 159 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2