X-On Electronics has gained recognition as a prominent supplier of PJMP130N65EC_T0_00001 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PJMP130N65EC_T0_00001 MOSFETs are a product manufactured by Panjit. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PJMP130N65EC_T0_00001 Panjit

PJMP130N65EC_T0_00001 electronic component of Panjit
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Part No.PJMP130N65EC_T0_00001
Manufacturer: Panjit
Category: MOSFETs
Description: MOSFET 650V/ 130mohm Super Junction Easy version Gen.1.5
Datasheet: PJMP130N65EC_T0_00001 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.1525 ea
Line Total: USD 6.15 
Availability - 970
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
970
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 6.1525
10 : USD 4.5195
100 : USD 4.071
250 : USD 4.0595
500 : USD 3.933
2000 : USD 3.887

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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We are delighted to provide the PJMP130N65EC_T0_00001 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PJMP130N65EC_T0_00001 and other electronic components in the MOSFETs category and beyond.

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PJMP130N65EC 650V N-Channel Super Junction MOSFET 650 V 130 m Voltage Rdson TO-220AB-L Current 29 A Qg 51 nC Feature: RDS(ON) Max, VGS 10V: 130m Easy to use/ drive High Speed Switching and Low RDS(ON) 100% Avalanche Tested 100% Rg Tested Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: TO-220AB-L package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0739 ounces, 2.0948 grams Application PFC, TV Power, PC Power, PD Charger, Adapter, UPS o Absolute Maximum Ratings (T = 25 C unless otherwise specified) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage T V 700 jmax DS Drain-Source Voltage V 650 V DS Gate-Source Voltage V 30 GS o TC=25 C 29.0 Continuous Drain Current I A D o T =100 C 17.7 C o Pulsed Drain Current T =25 C 63 A C I DM Single Pulse Avalanche Energy 640 mJ EAS MOSFET dv/dt ruggedness dv/dt 50 V/ns o TC=25 C 235 Power Dissipation PD W o TC=100 C 94 o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Thermal Characteristics PARAMETER SYMBOL MAXIMUM UNITS o Junction-to-Case R 0.53 C/W JC Thermal Resistance (Note 3) o Junction-to-Ambient R 62.5 C/W JA October 15,2021 PJMP130N65EC-REV.00 Page 1 PJMP130N65EC o Electrical Characteristics (TA = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =250uA 650 730 - DSS GS D V Gate Threshold Voltage V VDS=VGS, ID=250uA 2 3.0 4 GS(th) (Note V =10V, I =10.8A GS D Drain-Source On-State Resistance R - 113 130 m DS(on) 1) Zero Gate Voltage Drain Current I VDS=650V, VGS=0V - - 1 uA DSS Gate-Source Leakage Current I V =30V, V =0V - - 100 nA GSS GS DS Transfer characteristics gfs VDS=20V, ID=22A - 23 - S (Note 5) Dynamic Total Gate Charge Qg - 51 - V =520V, I =22A, DS D Gate-Source Charge Q - 11 - nC gs V =10V GS Gate-Drain Charge Qgd - 20 - Input Capacitance Ciss - 1920 - VDS=400V, VGS=0V, Output Capacitance Coss - 61 - f=250kHz Reverse Transfer Capacitance Crss - 8 - pF VDS=0V to 400V, Effective Output Capacitance Co(er) VGS=0V, f=250kHz - 84 - Energy Related (Note 4) Turn-On Delay Time td - 62 - (on) VDD=325V, ID=22A, Turn-On Rise Time t - 79 - r VGS=10V, RG=25 ns Turn-Off Delay Time td - 201 - (off) (Note 2) Turn-Off Fall Time tf - 77 - Gate Resistance Rg f=1.0MHz - 2.2 - Drain-Source Diode Maximum Continuous Drain-Source I - - 29 A S Diode Forward Current Diode Forward Voltage V IS=21.6A, VGS=0V - 0.89 1.5 V SD Reverse Recovery Charge Q I =21.6A - 6.6 - C rr S Reverse Recovery Time Trr di/dt=100A/s - 413 - ns NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance. 4. Co(er) is a capacitance that gives the same stored energy as Coss while VDS is rising from 0V to 80% V(BR)DSS 5. Guaranteed by design, not subject to production testing October 15,2021 PJMP130N65EC-REV.00 Page 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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