QST9TR ROHM

QST9 Datasheet Middle Power Transistor (-30V /-1A) llOutline Parameter Tr1 and Tr2 SOT-457T V -30V CEO SC-95 I -1A C TSMT6 llFeatures llInner circuit 1)Collector current is large. 2)Collector saturation voltage is low. V : max.-350mV CE(sat) at I =-500mA/I =-25mA C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) SOT-457T QST9 2928 TR 180 8 3000 T09 (TSMT6) www.rohm.com 1/6 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. QST9 Datasheet llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Values Unit V Collector-base voltage -30 V CBO V Collector-emitter voltage -30 V CEO V Emitter-base voltage -6 V EBO I -1 A C Collector current *1 I -2 A CP *2 P 0.5 W/Total D Power dissipation *3*4 P 1.25 W/Total D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -30 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -30 - - V CEO C voltage Emitter-base breakdown voltage BV I = -10A -6 - - V EBO E Collector cut-off current I V = -30V - - -100 nA CBO CB Emitter cut-off current I V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -500mA, I = -25mA - -150 -350 mV CE(sat) C B h DC current gain V = -2V, I = -100mA 270 - 680 - FE CE C V = -2V, I = 100mA, CE E f Transition frequency - 320 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 7 - pF ob f = 1MHz *1 Pw=1ms, Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(25250.8mm). *4 900mW per element must not be exceeded. www.rohm.com 2/6 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.