Product Information

RF4L055GNTCR

RF4L055GNTCR electronic component of ROHM

Datasheet
MOSFET NCH 60V 5.5A POWER

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9977 ea
Line Total: USD 1

2785 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2368 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 0.8361
10 : USD 0.6912
100 : USD 0.5531
500 : USD 0.4818
1000 : USD 0.4048
3000 : USD 0.3864
6000 : USD 0.3864
9000 : USD 0.3714
24000 : USD 0.3703

     
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RF4L055GN Datasheet Nch 60V 5.5A Power MOSFET llOutline DFN2020-8S V 60V DSS R (Max.) 43m DS(on) HUML2020L8 I 5.5A D P 2.0W D llInner circuit llFeatures 1) Low on - resistance 2) High Power small mold Package (HUML2020L8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCR Marking LA llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS I Continuous drain current 5.5 A D *1 I Pulsed drain current 22 A DP V Gate - Source voltage 20 V GSS *2 I Avalanche current, single pulse 3.5 A AS *2 E Avalanche energy, single pulse 9.5 mJ AS *3 P Power dissipation 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/10 20171211 - Rev.001 RF4L055GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 60 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V V = V , I = 1mA Gate threshold voltage 1.3 - 2.7 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -5.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 5.5A - 31 43 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 5.5A - 43 66 GS D R Gate resistance f=1MHz, open drain - 1.9 - G Forward Transfer *4 Y V = 5V, I = 5.5A 5.0 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 L 2mH, V = 30V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a Cu board (40400.8mm) *4 Pulsed www.rohm.com 2/10 20171211 - Rev.001 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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