Product Information

RFUH30TS6SGC11

RFUH30TS6SGC11 electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching 600V Vrm 30A Io Recovery Diode
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

33: USD 2.6852 ea
Line Total: USD 88.61

436 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 33  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
416 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 33
Multiples : 1
33 : USD 2.6852
50 : USD 2.6316

436 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 33
Multiples : 1
33 : USD 2.6852
50 : USD 2.6316

Read More Specifications

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Packaging
Hts Code
LoadingGif

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Additional Infomation About Product

Super Fast Recovery Diode RFUH30TS6S Data Sheet lSerise lDimensions (Unit : mm) lStructure Standard Fast Recovery lApplication General rectification RFUH30 TS6S 1 2 lFeatures 1) Ultra low switching loss High current overload capacity 2) lConstruction ROHM : TO247 Silicon epitaxial planar type 1 : Manufacture Year 2 : Manufacture Week lAbsolute maximum ratings (T = 25C) c Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 600 V RM V Direct voltage 600 Reverse voltage V R Average current I 60Hz half sin wave, Resistive load T =85C 30 A o c 60Hz half sin wave, Non-repetitive Non-repetitive forward surge current I 150 A FSM at T =25C, 1-3 pin common j T Operating junction temperature - 150 C j T - Storage temperature -55 to +150 C stg l Electrical characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit V I =30A Forward voltage 1.5 2.2 2.8 V F F V =600V Reverse current I - 0.1 10 R mA R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr - 25 35 ns F R R R Junction to case C / W Thermal resistance - - 0.8 th(j-c) www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.06 - Rev.A 1/4Data Sheet RFUH30TS6S lElectrical characteristic curves 100000 100 T = 150 C j 10000 10 T = 125 C j 1000 T = 150 C j 1 T = 75 C T = 125 C j j 100 T = 75 C j 0.1 T = 25 C j 10 T = 25 C j 1-3 pin common 1-3 pin common 0.01 1 0 100 200 300 400 500 600 0 500 1000 1500 2000 2500 3000 3500 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 T = 25 C f = 1MHz j 1-3 pin common T = 25 C a 100 100 10 I FSM 8.3ms 8.3ms 1cyc. 1 10 1 10 100 0 5 10 15 20 25 30 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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