Product Information

RFN5TF8SFHC9

RFN5TF8SFHC9 electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching 800V VR 5A IO ITO-220AC; TO-220NFM

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5187 ea
Line Total: USD 1.52

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 1.5187
10 : USD 1.2933
100 : USD 1.0512
500 : USD 0.9148
1000 : USD 0.7795
3000 : USD 0.776
10000 : USD 0.7499
25000 : USD 0.7487

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Hts Code
LoadingGif

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Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN5TF8SFH Serise Dimensions(Unit : mm) Structure Standard Fast Recovery Applications General rectification RFN5 TF8S Features 1)Low switching Loss 2)High current overload capacity Construction Silicon epitaxial planer type ROHM : O220NFM Manufacture Year Manufacture Week Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 800 V RM Reverse voltage V Direct voltage 800 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=106C 5 Io A Forward current surge peak I 60Hz half sin wave , Non-repetitive at Tj=25C 60 A FSM Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C Electrical Characteristics(Tj=25C) Parameter Conditions Min. Typ. Max. Symbol Unit V I =5A 1.6 2.1 Forward voltage F V F V =800V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 20 40 ns F R R Thermal resistance Rth(j-c) Junction to case 3.5 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Data Sheet RFN5TF8SFH 100 100000 Tj=150 C 10000 Tj=125 C 10 1000 Tj=75 C Tj=150 C Tj=125 C Tj=25 C 100 Tj=75 C 1 Tj=25 C 10 1 0.1 0 200 400 600 800 0 500 1000 1500 2000 2500 3000 3500 FORWARD VOLTAGE:V (mV) F REVERSE VOLTAGE:V (V) R V -I CHARACTERISTICS F F V -I CHARACTERISTICS R R 1000 1800 V =800V R I =5A F 1750 Tj=25 C Tj=25 C 1700 1650 AVE:75.0nA 100 1600 1550 AVE:1593mV 1500 1450 1400 10 I DISPERSION MAP R V DISPERSION MAP F 1000 180 f=1MHz f=1MHz 175 V =0V R 170 Tj=25 C 165 100 160 AVE:142pF 155 150 145 10 140 135 130 125 1 120 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) R Ct DISPERSION MAP V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) TERMINALS:Ct(pF) F FORWARD CURRENT:I (A) F CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) TERMINALS:Ct(pF) R REVERSE CURRENT:I (nA) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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