BAW100G TR Central Semiconductor

BAW100 BAW100G www.centralsemi.com SURFACE MOUNT SILICON DESCRIPTION: DUAL, ISOLATED HIGH SPEED The CENTRAL SEMICONDUCTOR BAW100 and SWITCHING DIODES BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-143 surface mount case. This device is designed for high speed switching applications. The BAW100G is Halogen Free by design. MARKING CODES: BAW100: CJSS BAW100G: CJSG SOT-143 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Continuous Reverse Voltage V 75 V R Peak Repetitive Reverse Voltage V 85 V RRM Continuous Forward Current I 250 mA F Peak Repetitive Forward Current I 500 mA FRM Peak Forward Surge Current, tp=1.0ms I 4.0 A FSM Peak Forward Surge Current, tp=1.0ms I 2.0 A FSM Peak Forward Surge Current, tp=1.0s I 1.0 A FSM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V =25V, T=150C 30 A R R A I V=75V 1.0 A R R I V =75V, T=150C 50 A R R A BV I=100A 85 V R R V I=1.0mA 715 mV F F V I=10mA 855 mV F F V I=50mA 1.00 V F F V I=150mA 1.25 V F F C V =0, f=1.0MHz 2.0 pF J R t I =I =10mA, I =1.0mA, R =100 6.0 ns rr F R rr L R5 (19-September 2018)BAW100 BAW100G SURFACE MOUNT SILICON DUAL, ISOLATED HIGH SPEED SWITCHING DIODES SOT-143 CASE - MECHANICAL OUTLINE PIN CONFIGURATION DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX A 0.003 0.008 0.08 0.20 B0.006 - 0.15 - C 0.000 0.005 0.01 0.13 D 0.035 0.045 0.89 1.14 E 0.110 0.120 2.79 3.04 F 0.075 1.90 G 0.083 0.102 2.10 2.60 H 0.047 0.055 1.19 1.40 J 0.012 0.020 0.30 0.50 K 0.030 0.037 0.76 0.93 L 0.067 1.70 SOT-143 (REV: R3) LEAD CODE: 1) Anode D1 2) Anode D2 MARKING CODES: 3) Cathode D2 BAW100: CJSS 4) Cathode D1 BAW100G: CJSG R5 (19-September 2018) www.centralsemi.com