Product Information

RFUH5TF6SFHC9

RFUH5TF6SFHC9 electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching 600V VR 5A IO ITO-220AC; TO-220NFM

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4609 ea
Line Total: USD 1.46

1315 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1257 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.403
10 : USD 1.1615
100 : USD 0.9315
500 : USD 0.8119
1000 : USD 0.6497
5000 : USD 0.6497
10000 : USD 0.6245
25000 : USD 0.6083

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Hts Code
LoadingGif

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Super Fast Recovery Diode RFUH5TF6SFH Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Structure Standard Fast Recovery Anode Cathode Applications General rectification RFUH5 TF6S 1 2 Features 1) Ultra low switching loss 2) High current overload capacity Construction ROHM : O220NFM Silicon epitaxial planar type 1 : Manufacture year 2 : Manufacture week Packing (Unit : mm) 7 540 Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM Reverse voltage V Direct reverse voltage 600 V R 60Hz half sin wave, T =90C I Average current c 5 A o resistive load, 60Hz half sin wave, one cycle, Non-repetitive forward surge current I 30 A FSM non-repetitive at T=25C j Operating junction temperature T - 150 C j Storage temperature T - 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit I =5A Forward voltage V -2.0 2.8 V F F I V =600V Reverse current -- 10 A R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 12 25 ns F R R Thermal resistance R Junction to case -- 4.0 C / W th(j-c) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.09 - Rev.A 1/4 34.5Data Sheet RFUH5TF6SFH Electrical characteristic curves 100000 100 T = 150 C T = 125 C j j T = 150 C j 10000 T = 125 C 10 j 1000 T = 75 C j 100 1 T = 25 C j T = 75 C j 10 T = 25 C j 0.1 T = 40 C j 1 T = 40 C j 0.1 0.01 0.01 0.001 0.001 0 100 200 300 400 500 600 0 500 1000 1500 2000 2500 3000 3500 4000 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 100 100 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.09 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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