RFUS10TF4S ROHM

Data Sheet Super Fast Recovery Diode RFUS10TF4S lSeries lDimensions (Unit : mm) lStructure Standard Fast Recovery lApplications General rectification RFUS10 TF4S lFeatures 1)Single type.(TO-220) 2)High switching speed lConstruction Silicon epitaxial planer ROHM : TO220NFM Manufacture Year Manufacture Week lAbsolute maximum ratings (Tc=25 C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 430 V RM V Reverse voltage 430 V R 60Hz half sin wave, Resistance load, Average rectified forward current Io Tc=82C 10 A 60Hz half sin wave, Non-repetitive I Forward current surge peak 80 A FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature C Tstg -55 to +150 lElectrical characteristics (Tj=25 C) Parameter Conditions Symbol Min. Typ. Max. Unit I =10A Forward voltage V 1.45 1.7 V F F Reverse current I V =430V 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 19 30 ns F R R Thermal resistance Rth(j-c) junction to case 3 C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/4 Not Recommended for New DesignsData Sheet RFUS10TF4S 100000 100 Tj=150 C Tj=125 C 10000 Tj=150 C Tj=125 C 10 1000 Tj=75 C Tj=25 C 100 Tj=75 C 1 Tj=25 C 10 0.1 1 0 1 2 3 0 100 200 300 400 REVERSE VOLTAGE V (V) R FORWARD VOLTAGEV (V) F V -I CHARACTERISTICS R R V -I CHARACTERISTICS F F 1000 1700 f=1MHz 1650 I =10A F Tj=25 C 1600 1550 100 1500 1450 1400 10 AVE:1436mV 1350 1300 1250 1 1200 0 5 10 15 20 25 30 V DISPERSION MAP F REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R 100 250 V =430V R f=1MHz 240 Tj=25 C V =0V R 230 Tj=25 C 220 210 10 200 AVE:182.2pF 190 AVE:13.6nA 180 170 160 1 150 I DISPERSION MAP Ct DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 2/4 Not Recommended for New Designs CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) FORWARD CURRENT:I (A) F R TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F REVERSE CURRENT:I (nA) TERMINALS:Ct(pF) R