Product Information

RFUS20TM6S

RFUS20TM6S electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching DIODE SWITCH 600V 20A 3PIN
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.8975 ea
Line Total: USD 1.9

957 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
957 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.8975
10 : USD 1.61
100 : USD 1.3225
500 : USD 1.1465
1000 : USD 0.9856
2000 : USD 0.9856
5000 : USD 0.9856
10000 : USD 0.9464
25000 : USD 0.9235

365 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 71
Multiples : 1
71 : USD 1.4237

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RFUS20TM6S Series Dimensions(Unit : mm) Structure +0.3 +0.3 Ultra Fast Recovery -0.1 -0.1 +0.2 -0.1 Applications (1) (2) (3) General rectification Features 1)Cathode Common Single type.(TO-220) 2)Ultra High switching speed (1) (2) (3) +0.1 -0.05 Construction Silicon epitaxial planar Absolute maximum ratings(Tc=25C) Parameter Conditions Limits Symbol Unit Repetitive peak reverse voltage V Duty0.5 600 V RM Reverse voltage Direct voltage 600 V V R Average rectified forward current Io 60Hz half sin wave, Resistance load, 20 A Tc=50C 60Hz half sin wave, Non-repetitive Forward current surge peak I 100 A FSM one cycle peak value, Tj=25C Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C Electrical characteristics(Tj=25 C) Parameter Conditions Typ. Symbol Min. Max. Unit I =20A 2.3 Forward voltage V 2.8 V F F Reverse current I V =600V 0.05 10 A R R Reverse recovery time trr I =0.5A,I =1A,Irr=0.25I 23 35 ns F R R Thermal Resistance Rth(j-c) junction to case 1.8 C / W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.06 - Rev.A 1/3 Not Recommended for New Designs +0.4 -0.2Data Sheet RFUS20TM6S Electrical characteristics curves 100 100000 1000 Tj=125 C Tj=150 C f=1MHz Tj=150C 10000 Tj=25 C 10 Tj=125 C Tj=25 C 1000 Tj=75 C 100 100 Tj=75 C 1 10 Tj=25 C 1 0.1 10 0 50 100 150 200 250 300 350 0 1000 2000 3000 4000 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) FORWARD VOLTAGE : V (mV) R REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS R R V -Ct CHARACTERISTICS F F R 450 1000 2500 445 Ta=25C T=25 C T=25 C 440 f=1MHz 2400 I =20A V =600V F R V =0V R AVE : 2113mV n=20pcs n=20pcs 435 n=10pcs 100 2300 430 AVE : 415.9pF 425 2200 420 10 2100 415 410 AVE : 61.8nA 2000 405 400 1 1900 I DISPERSION MAP Ct DISPERSION MAP R V DISPERSION MAP F 1000 300 40 T=25 C I 1cyc FSM I =0.5A F 250 35 I =1A R Irr=0.25I 8.3ms R 100 200 30 n=10pcs 150 25 10 100 20 I FSM AVE : 156A AVE:26.1ns 50 15 8.3ms 8.3ms 1cyc. 0 10 1 110 100 DISRESION MAP I trr DISPERSION MAP FSM NUMBER OF CYCLES I -CYCLE CHARACTERISTICS FSM 1000 15 10 I FSM Rth(j-c) time 12 9 100 1 AVE : 11.0kV 6 AVE : 1.20kV 3 10 0 0.1 1 10 100 C=200pF C=100pF 0.001 0.01 0.1 1 10 100 1000 R=0 R=1.5k TIME : t(ms) TIME : t(s) ESD DISPERSION MAP I -t CHARACTERISTICS FSM Rth-t CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A Not Recommended for New Designs ITS ABILITY OF PEAK SURGE PEAK SURGE FORWARD CURRENT : I (A) FSM FORWARD VOLTAGE : V (mV) FORWARD CURRENT : I (A) FORWARD CURRENT : I (A) F F FSM ELECTROSTATIC REVERSE CURRENT : I (nA) R REVERSE CURRENT : I (nA) R REVERSE RECOVERY TIME : trr(ns) DISCHARGE TEST ESD(KV) CAPACITANCE BETWEEN TRANSIENT PEAK SURGE CAPACITANCE BETWEEN TERMINALS : Ct(pF) THAERMAL IMPEDANCE : Rth ( C/W) FORWARD CURRENT : I (A) TERMINALS : Ct(pF) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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