Product Information

RFV5BM6SFHTL

RFV5BM6SFHTL electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching 600V VR 5A IO TO-252(DPAK); TO-252
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2221 ea
Line Total: USD 1.22

2403 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2403 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 1.2221
10 : USD 1.0145
100 : USD 0.8139
500 : USD 0.7095
1000 : USD 0.5933
2500 : USD 0.5684
5000 : USD 0.5684
10000 : USD 0.5458
25000 : USD 0.5316

Read More Specifications

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Hts Code
LoadingGif

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Additional Infomation About Product

Super Fast Recovery Diode RFV5BM6SFH Datasheet AEC-Q101 Qualified Application Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 Standard Fast Recovery (2) Application 1.6 1.6 General rectification 1 For PFC 2.3 2.3 TO-252 (1) (3) (CCM : Continuous Current Mode) Cathode Structure Features ROHM : TO-252 1 : Manufacture date JEITA : SC-63 1) Hyper fast recovery Open Anode / Hard recovery type Taping Dimensions (Unit : mm) 2) Ultra low switching loss High current overload capacity 3) Construction Silicon epitaxial planar type Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM V Reverse voltage Direct reverse voltage 600 V R 60Hz half sin wave , resistive load T =75C Average current I c 5 A o 60Hz half sin wave, non-repetitive at T=25C Non-repetitive forward surge current I j 60 A FSM T - 150 Operating junction temperature C j T Storage temperature - 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit T =25C 1.6 2.2 2.8 V j V I =5A Forward voltage F F T =125C j -1.5 - V T =25C -0.03 10 A j I V =600V Reverse current R R T =125C - 5 200 j A I =0.5A, I =1A, Irr=0.25I -12 20 ns F R R Reverse recovery time trr I =5A, V =400V, dI /dt=200A/s -20 40 ns F R F I I =5A, V =400V Reverse recovery current -4.5 - A Rp F R T =125C j Reverse recovery charges Qrr dI /dt=200A/s - 130 - nC F Forward recovery time tfr I =5A, dI /dt=50A/s, - 145 - ns F F V V =1.1xV Forward recovery voltage -3.6 - V Fp FR Fmax R (j-a) Junction to ambient -- 20C/W th Thermal resistance R (j-c) Junction to case -- 5.5C/W th www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.12 - Rev.B 1/5 6.0 3.0 2.0Datasheet RFV5BM6SFH Electrical Characteristic Curves 100000 100 T = 150C T = 125C j j 10000 10 1000 T = 150C j T = 75C j 1 T = 125C j 100 T = 75C j T = 25C j T = 25C j 0.1 10 1 0.01 0 100 200 300 400 500 600 0 1000 2000 3000 4000 5000 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 100 1000 T = 25C j f = 1MHz T = 25C a 100 10 10 I FSM 8.3ms 8.3ms 1cyc. 1 1 110 100 0 5 10 15 20 25 30 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.12 - Rev.B 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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