Product Information

RFV12TG6SGC9

RFV12TG6SGC9 electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching 600V Vrm 12A Io Recovery Diode
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.755 ea
Line Total: USD 1.76

681 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
286 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.495
10 : USD 1.288
100 : USD 1.0546
500 : USD 0.9085
1000 : USD 0.7832
2000 : USD 0.7751
5000 : USD 0.7694
10000 : USD 0.744
25000 : USD 0.7418

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Packaging
Brand
Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Vr - Reverse Voltage
LoadingGif

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Additional Infomation About Product

Super Fast Recovery Diode RFV12TG6S Data Sheet lSerise lDimensions (Unit : mm) lStructure f3.80.06 4.50.1 Standard Fast Recovery 10.20.2 1.280.06 lApplication General rectification RFV12 For PFC Cathode Anode TG6S (CCM : Continuous Current Mode) 1 2 lFeatures 2.60.1 Hyper fast recovery / Hard recovery type 1) 1.40.2 2) Ultra low switching loss 3) High current overload capacity 0.60.1 0.06 2.540.1 0.83 0.10 lConstruction 5.080.1 Silicon epitaxial planar type ROHM : TO-220AC 1 : Manufacture year, week,day, package code 2 : Serial number lAbsolute Maximum Ratings (T = 25C) a Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 600 V RM V Direct reverse voltage 600 Reverse voltage V R I 60Hz half sin wave , resistive load Average current 12 A o 60Hz half sin wave, one cycle, non-repetitive at T =25C Non-repetitive forward surge current I j 120 A FSM Operating junction temperature T - 150 C j Storage temperature T - -55 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit T =25C j 1.6 2.3 2.8 V Forward voltage V I =12A F F T =125C j - 1.55 - V T =25C j - 0.03 10 mA I V =600V Reverse current R R T =125C j - 8 200 mA I =0.5A, I =1A, Irr=0.25I - 18 25 ns F R R Reverse recovery time trr I =12A, V =400V, dI /dt=-200A/ms - 27 45 ns F R F I =12A, V =400V Reverse recovery current I - 6.0 - A F R Rp T =125C j Reverse recovery charges Qrr dI /dt=-200A/ms - 180 - nC F I =12A, dI /dt=200A/ms, Forward recovery time tfr - 120 - ns F F V V =1.1xV Forward recovery voltage - 5.5 - V Fp FR Fmax R (j-a) Junction to ambient - - 2.3 C/W th Thermal resistance R (j-c) Junction to case - - 1.4 C/W th www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.A 1/5 2.70.1 16.40.15 9.46 4.050.15 13.51 28.56 6.00.15 9.05 15.050.15 Data Sheet RFV12TG6S lElectrical Characteristic Curves 100000 100 T = 150 C j T = 125 C j 10000 10 T = 150 C j T = 75 C j 1000 T = 125 C j 1 100 T = 25 C T = 75 C j j 0.1 10 T = 25 C j 1 0.01 0 100 200 300 400 500 600 0 1000 2000 3000 4000 5000 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 T = 25 C f = 1MHz j T = 25 C a 100 100 10 I FSM 8.3ms 8.3ms 1cyc. 10 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.A 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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