X-On Electronics has gained recognition as a prominent supplier of RV2C002UNT2L MOSFET across the USA, India, Europe, Australia, and various other global locations. RV2C002UNT2L MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RV2C002UNT2L ROHM

RV2C002UNT2L electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.RV2C002UNT2L
Manufacturer: ROHM
Category: MOSFET
Description: ROHM Semiconductor MOSFET
Datasheet: RV2C002UNT2L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.437 ea
Line Total: USD 0.44

Availability - 14519
Ships to you between
Thu. 27 Jun to Mon. 01 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
76 - WHS 1


Ships to you between
Fri. 28 Jun to Wed. 03 Jul

MOQ : 1
Multiples : 1
1 : USD 0.5134
10 : USD 0.4176
30 : USD 0.3761
100 : USD 0.3255
500 : USD 0.3028
1000 : USD 0.2897

14519 - WHS 2


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 0.437
10 : USD 0.3036
100 : USD 0.1253
1000 : USD 0.0828
8000 : USD 0.0586

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Product
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the RV2C002UNT2L from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RV2C002UNT2L and other electronic components in the MOSFET category and beyond.

RV2C002UN Datasheet Nch 20V 180mA Small Signal MOSFET llOutline DFN1006-3 V 20V DSS SC-101 R (Max.) 2.0 DS(on) VML1006 I 180mA D P 100mW D llFeatures llInner circuit 1) Low on - resistance. 2) High Power small mold Package (VML1006). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llApplication llPackaging specifications Embossed Switching Packing Tape Reel size (mm) 180 Tape width (mm) 8 Type Basic ordering unit (pcs) 8000 Taping code T2L Marking RY llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS I Continuous drain current 180 mA D *1 Pulsed drain current I 600 mA DP V Gate - Source voltage 10 V GSS *2 Power dissipation P 100 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160825 - Rev.001 RV2C002UN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 Thermal resistance, junction - ambient R - - 1250 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 8V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 100A 0.3 - 1.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 150mA - 1.4 2.0 GS D V = 2.5V, I = 150mA - 1.7 2.6 GS D Static drain - source *3 R V = 1.8V, I = 150mA - 2.2 3.4 DS(on) GS D on - state resistance V = 1.5V, I = 20mA - 2.7 5.4 GS D V = 1.2V, I = 10mA - 3.8 11.4 GS D Forward Transfer *3 Y V = 10V, I = 150mA 110 - - mS fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/10 20160825 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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