X-On Electronics has gained recognition as a prominent supplier of SCT3060ALGC11 mosfet across the USA, India, Europe, Australia, and various other global locations. SCT3060ALGC11 mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SCT3060ALGC11 ROHM

SCT3060ALGC11 electronic component of ROHM
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See Product Specifications
Part No.SCT3060ALGC11
Manufacturer: ROHM
Category:MOSFET
Description: MOSFET N-Ch 650V SiC 39A 60mOhm TrenchMOS
Datasheet: SCT3060ALGC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 13.894 ea
Line Total: USD 13.89

Availability - 161
Ships to you between
Fri. 07 Jun to Tue. 11 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
15 - WHS 1


Ships to you between Fri. 07 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 13.8
25 : USD 11.8795
50 : USD 11.4885
100 : USD 10.9365
250 : USD 10.58
450 : USD 10.074

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SCT3060ALGC11 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3060ALGC11 and other electronic components in the MOSFET category and beyond.

SCT3060AL Datasheet N-channel SiC power MOSFET lOutline TO-247N V 650V DSS R (Typ.) 60mW DS(on) I 39A D (3) P 165W (2) D (1) lInner circuit lFeatures (1) Gate (2) Drain 1) Low on-resistance (3) Source 2) Fast switching speed *1 Body Diode 3) Fast reverse recovery 4) Easy to parallel lPackaging specifications 5) Simple to drive Packing Tube 6) Pb-free lead plating RoHS compliant Reel size (mm) - Tape width (mm) - Type lApplication Basic ordering unit (pcs) 30 Solar inverters Taping code C11 DC/DC converters Marking SCT3060AL Switch mode power supplies Induction heating Motor drives lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 650 V DSS *1 T = 25C I 39 A c D Continuous drain current *1 T = 100C I 27 A c D *2 Pulsed drain current 97 A I D,pulse V Gate - Source voltage (DC) -4 to +22 V GSS *3 Gate-Source Surge Voltage (t < 300nsec) V V -4 to +26 surge GSS surge *4 Recommended Drive Voltage V 0 / +18 V GS op T Junction temperature 175 C j Range of storage temperature T C -55 to +175 stg www.rohm.com TSQ50211-SCT3060AL 2018 ROHM Co., Ltd. All rights reserved. 1/12 14.Jun.2018 - Rev.005 TSZ2211114001Datasheet SCT3060AL lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.70 0.91 C/W thJC lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 650 - - V (BR)DSS GS D voltage V = 650V, V = 0V DS GS Zero gate voltage I T = 25C - 1 10 mA DSS j drain current T = 150C - 2 - j Gate - Source leakage current I V = +22V, V = 0V - - 100 nA GSS + GS DS Gate - Source leakage current I V = -4V, V = 0V - - nA -100 GSS - GS DS V V = 10V, I = 6.67mA Gate threshold voltage 2.7 - 5.6 V GS (th) DS D V = 18V, I = 13A GS D Static drain - source *5 T = 25C R - 60 78 m W j DS(on) on - state resistance T = 125C - 79.2 - j Gate input resistance R f = 1MHz, open drain - 12 - W G www.rohm.com TSQ50211-SCT3060AL 2018 ROHM Co., Ltd. All rights reserved. 2/12 14.Jun.2018 - Rev.005 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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