X-On Electronics has gained recognition as a prominent supplier of RU1H150S MOSFETs across the USA, India, Europe, Australia, and various other global locations. RU1H150S MOSFETs are a product manufactured by Ruichips. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RU1H150S Ruichips

RU1H150S electronic component of Ruichips
RU1H150S Ruichips
RU1H150S MOSFETs
RU1H150S  Semiconductors

Images are for reference only
See Product Specifications
Part No. RU1H150S
Manufacturer: Ruichips
Category: MOSFETs
Description: MOSFET N Trench 108V 150A 4V @ 250uA 4 mO @75A,10V TO-263-2 RoHS
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1997 ea
Line Total: USD 1.2 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 18 Jul to Wed. 23 Jul
MOQ : 1
Multiples : 1
1 : USD 1.1997
10 : USD 1.0198
30 : USD 0.9197
100 : USD 0.809
500 : USD 0.6708
1000 : USD 0.649

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RU1H150S from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RU1H150S and other electronic components in the MOSFETs category and beyond.

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The RU1H150S is a MOSFET N Trench described in TO-263-2 package featuring 108V Drain-Source Breakdown Voltage (BVDSS), 150A Drain Source Continuous Current (ID), 4V Gate Threshold Voltage (VGS(th)), 250uA Gate-Source Leakage Current (IGSS), 4mO On Resistance@25A (RDS(on)) and 10V Gate-Source Voltage (VGS). The device is RoHS compliant and manufactured by Ruichips.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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