The SINO-IC SE2N7002 MOSFET is a N-channel TrenchMOSFET available in a SOT-23-3 package that is RoHS compliant. This small, low-power device offers a maximum drain current-to-source voltage IDSS of 300mA and a maximum gate-source voltage VGS of 850mV. It also has a threshold voltage of 2Ω @ 500mA and a maximum drain-source breakdown voltage Vdss of 60V. Its very low on-resistance RDS(ON) of 250uA @ 10V makes it suitable for use in switching applications.