MJE3055T STMicroelectronics

MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary 3 2 PNP type is MJE2955T. 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN MJE3055T PNP MJE2955T V Collector-Emitter Voltage (I = 0) 60 V CEO B V Collector-Base Voltage (I = 0) 70 V CBO E V Emitter-Base Voltage (I = 0) 5 V EBO C I Collector Current 10 A C IB Base Current 6 A o P 75 W tot Total Power Dissipation at T 25 C case o T Storage Temperature -55 to 150 C stg o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values are negative. 1/4 September 2003 MJE2955T / MJE3055T THERMAL DATA o R Thermal Resistance Junction-case Max 1.66 C/W thj-case o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 30 V 700 A CEO CE Current (I = 0) B I Collector Cut-off V = 70 V 1 mA CEX CE o Current (V = 1.5V) T 150 C 5 mA BE case = I Collector Cut-off V = 70 V 1 mA CBO CBO o Current (I = 0) T 150 C 10 mA E case = I Emitter Cut-off Current V = 5 V 5 mA EBO EBO (I = 0) C V * Collector-Emitter I = 200 mA 60 V CEO(sus) C Sustaining Voltage (I = 0) B V * Collector-Emitter I = 4 A I = 0.4 A 1.1 V CE(sat) C B Sustaining Voltage IC = 10 A IB = 3.3 A 8 V VBE(on)* Base-Emitter on IC = 4 A VCE = 4 V 1.8 V Voltage h DC Current Gain I = 4 A V = 4 V 20 70 FE C CE I = 10 A V = 4 V 5 C CE fT Transistor Frequency IC = 500 mA VCE = 10 V 2 MHz f = 500 KHz * Pulsed: Pulse duration = 300s, duty cycle 2 % For PNP type voltage and current values are negative. 2/4