SCTH90N65G2V-7 STMicroelectronics

SCTH90N65G2V-7 Datasheet Silicon carbide Power MOSFET 650 V, 116 A, 18 m (typ., T = 25 C) J in an HPAK 7 package Features TAB V R max. I Order code DS DS(on) D SCTH90N65G2V-7 650 V 24 m 116 A 7 Very high operating junction temperature capability (T = 175 C) J 1 Very fast and robust intrinsic body diode Extremely low gate charge and input capacitances 2 H PAK-7 Applications Drain (TAB) Switching applications Power supply for renewable energy systems High frequency DC-DC converters Gate (1) Description Driver source (2) This silicon carbide Power MOSFET device has been developed using STs nd advanced and innovative 2 generation SiC MOSFET technology. The device Power source (3, 4, 5, 6, 7) features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction N-chG1DS2PS34567DTAB temperature. Product status link SCTH90N65G2V-7 Product summary Order code SCTH90N65G2V-7 Marking SCT90N65 2 Package H PAK-7 Packing Tape and reel DS12084 - Rev 4 - July 2019 www.st.com For further information contact your local STMicroelectronics sales office.SCTH90N65G2V-7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 650 V DS Gate-source voltage -10 to 22 V V GS Gate-source voltage (recommended operating values) -5 to 18 Drain current (continuous) at T = 25 C 116 C I A D Drain current (continuous) at T = 100 C 82 C (1) I Drain current (pulsed) 220 A DM P Total power dissipation at T = 25 C 484 W TOT C T Storage temperature range C stg -55 to 175 T Operating junction temperature range C J 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.31 C/W thj-case R Thermal resistance junction-ambient 40 C/W thj-amb DS12084 - Rev 4 page 2/14