Product Information

SCTH90N65G2V-7

SCTH90N65G2V-7 electronic component of STMicroelectronics

Datasheet
MOSFET Silicon carbide Power MOSFET 650 V 90 A 22 mOhm typ. TJ = 150 C in an H2PAK-7 package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 26.1875 ea
Line Total: USD 26.19

2240 - Global Stock
Ships to you between
Tue. 14 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4180 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 1
Multiples : 1

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SCTH90N65G2V-7
STMicroelectronics

1 : USD 28.475
10 : USD 25.9
25 : USD 25.382
50 : USD 25.382
100 : USD 25.382

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

SCTH90N65G2V-7 Datasheet Silicon carbide Power MOSFET 650 V, 116 A, 18 m (typ., T = 25 C) J in an HPAK 7 package Features TAB V R max. I Order code DS DS(on) D SCTH90N65G2V-7 650 V 24 m 116 A 7 Very high operating junction temperature capability (T = 175 C) J 1 Very fast and robust intrinsic body diode Extremely low gate charge and input capacitances 2 H PAK-7 Applications Drain (TAB) Switching applications Power supply for renewable energy systems High frequency DC-DC converters Gate (1) Description Driver source (2) This silicon carbide Power MOSFET device has been developed using STs nd advanced and innovative 2 generation SiC MOSFET technology. The device Power source (3, 4, 5, 6, 7) features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction N-chG1DS2PS34567DTAB temperature. Product status link SCTH90N65G2V-7 Product summary Order code SCTH90N65G2V-7 Marking SCT90N65 2 Package H PAK-7 Packing Tape and reel DS12084 - Rev 4 - July 2019 www.st.com For further information contact your local STMicroelectronics sales office.SCTH90N65G2V-7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 650 V DS Gate-source voltage -10 to 22 V V GS Gate-source voltage (recommended operating values) -5 to 18 Drain current (continuous) at T = 25 C 116 C I A D Drain current (continuous) at T = 100 C 82 C (1) I Drain current (pulsed) 220 A DM P Total power dissipation at T = 25 C 484 W TOT C T Storage temperature range C stg -55 to 175 T Operating junction temperature range C J 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.31 C/W thj-case R Thermal resistance junction-ambient 40 C/W thj-amb DS12084 - Rev 4 page 2/14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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