STB20NM60T4 STMicroelectronics

STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 2 2 N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D /I PAK MDmesh Power MOSFET Features Type V R I DSS DS(on) D 3 1 STP20NM60 600V < 0.29 20A DPAK STP20NM60FP 600V < 0.29 20A TO-247 STB20NM60 600V < 0.29 20A STB20NM60-1 600V < 0.29 20A 3 2 1 STW20NM60 600V < 0.29 20A TO-220FP High dv/dt and avalanche capabilities 3 2 3 1 2 100% avalanche tested 1 TO-220 Low input capacitance and gate charge IPAK Low gate input resistance Applications Figure 1. Internal schematic diagram Switching applications Description The MDmesh is a new revolutionary Power MOSFET technology that associates the multiple drain process with the companys PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the companys proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitions products. Table 1. Device summary Part number Marking Package Packaging STP20NM60 P20NM60 TO-220 Tube STP20NM60FP P20NM60FP TO-220FP Tube STB20NM60T4 B20NM60 DPAK Tape & reel STB20NM60-1 B20NM60-1 IPAK Tube STW20NM60 W20NM60 TO-247 Tube August 2007 Rev 12 1/18 www.st.com 18Contents STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuit 9 4 Package mechanical data 10 5 Packaging mechanical data 16 6 Revision history . 17 2/18