X-On Electronics has gained recognition as a prominent supplier of STD15N60DM6 mosfet across the USA, India, Europe, Australia, and various other global locations. STD15N60DM6 mosfet are a product manufactured by STMicroelectronics. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

STD15N60DM6 STMicroelectronics

STD15N60DM6 electronic component of STMicroelectronics
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Part No.STD15N60DM6
Manufacturer: STMicroelectronics
Category:MOSFET
Description: MOSFET N-channel 600 V, 286 mOhm typ., 12 A MDmesh DM6 Power MOSFET
Datasheet: STD15N60DM6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.0712 ea
Line Total: USD 3.07

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
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Ships to you between Tue. 18 Jun to Mon. 24 Jun

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10 : USD 3.9213
100 : USD 3.152
500 : USD 2.5899
1000 : USD 2.1458

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Ships to you between Tue. 18 Jun to Mon. 24 Jun

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10 : USD 3.9213
100 : USD 3.152
500 : USD 2.5899
1000 : USD 2.1458

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100 : USD 1.9604
500 : USD 1.5925
1000 : USD 1.3487

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Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Hts Code
LoadingGif
 
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STD15N60DM6 Datasheet N-channel 600 V, 286 m typ., 12 A MDmesh DM6 Power MOSFET in a DPAK package Features V R max. I Order code TAB DS DS(on) D STD15N60DM6 600 V 338 m 12 A 3 2 1 Fast-recovery body diode DPAK Lower R per area vs previous generation DS(on) Low gate charge, input capacitance and resistance D(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness G(1) Zener-protected Applications S(3) AM01475V1 Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q ), recovery time (t ) and excellent rr rr improvement in R per area with one of the most effective switching behaviors DS(on) available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status STD15N60DM6 Product summary Order code STD15N60DM6 Marking 15N60DM6 Package DPAK Packing Tape and reel DS13337 - Rev 1 - May 2020 www.st.com For further information contact your local STMicroelectronics sales office.STD15N60DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 12 C I A D Drain current (continuous) at T = 100 C 7.3 C (1) I Drain current (pulsed) 32 A DM P Total power dissipation at T = 25 C 110 W TOT C (2) I Avalanche current, repetitive or not repetitive 3 A AR (3) E Single pulse avalanche energy 240 mJ AS (4) dv/dt Peak diode recovery voltage slope 100 V/ns (4) Peak diode recovery current slope 1000 A/s di/dt (5) dv/dt MOSFET dv/dt ruggedness 100 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Pulse width is limited by safe operating area. 2. Pulse width limited by T max. J 3. Starting T = 25 C, I = I , V = 50 V. J D AR DD 4. I 12 A, V < V , V = 400 V. SD DS (peak) (BR)DSS DD 5. V 480 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.14 thj-case C/W (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on an 1-inch FR-4, 2 Oz copper board. DS13337 - Rev 1 page 2/17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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