X-On Electronics has gained recognition as a prominent supplier of STGW25H120F2 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGW25H120F2 IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGW25H120F2 STMicroelectronics

STGW25H120F2 electronic component of STMicroelectronics
STGW25H120F2 STMicroelectronics
STGW25H120F2 IGBT Transistors
STGW25H120F2  Semiconductors

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Part No. STGW25H120F2
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Datasheet: STGW25H120F2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
30: USD 3.0703 ea
Line Total: USD 92.11 
Availability - 0
MOQ: 30  Multiples: 30
Pack Size: 30
Availability Price Quantity
0
Ship by Mon. 12 May to Fri. 16 May
MOQ : 600
Multiples : 600
600 : USD 3.8825
1200 : USD 3.8437
3000 : USD 3.805

0
Ship by Mon. 12 May to Fri. 16 May
MOQ : 30
Multiples : 30
30 : USD 4.6236
90 : USD 4.5564
150 : USD 4.3553
600 : USD 4.2777
900 : USD 4.2261

0
Ship by Thu. 08 May to Mon. 12 May
MOQ : 1
Multiples : 1
1 : USD 7.7013
10 : USD 6.6821
25 : USD 6.3788
100 : USD 5.5318
600 : USD 4.8208
1200 : USD 4.6848

0
Ship by Mon. 12 May to Fri. 16 May
MOQ : 7
Multiples : 1
7 : USD 5.5968
10 : USD 5.5815

0
Ship by Mon. 12 May to Fri. 16 May
MOQ : 5
Multiples : 1
5 : USD 5.839

0
Ship by Mon. 12 May to Fri. 16 May
MOQ : 30
Multiples : 30
30 : USD 3.0703

   
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STGW25H120F2 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGW25H120F2 and other electronic components in the IGBT Transistors category and beyond.

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STGW25H120F2, STGWA25H120F2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current V = 2.1 V (typ.) I = 25 A CE(sat) C 5 s minimum short circuit withstand time at T =150 C J Tight parameters distribution 2 7 2 ORQJ OHDGV 7 Safe paralleling Low thermal resistance Applications Figure 1. Internal schematic diagram C (2) Uninterruptible power supply Welding machines Photovoltaic inverters Power factor correction High frequency converters G (1) Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series SC12850 E (3) of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive V temperature coefficient CE(sat) and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW25H120F2 G25H120F2 TO-247 Tube STGWA25H120F2 G25H120F2 TO-247 long leads Tube March 2015 DocID026003 Rev 4 1/17 This is information on a product in full production. www.st.com 17Contents STGW25H120F2, STGWA25H120F2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 11 4 Package information 12 4.1 TO-247, package information 12 4.2 TO-247 long leads, package information . 14 5 Revision history . 16 2/17 DocID026003 Rev 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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