STGW25M120DF3 STMicroelectronics

STGW25M120DF3 electronic component of STMicroelectronics
STGW25M120DF3 STMicroelectronics
STGW25M120DF3 IGBT Transistors
STGW25M120DF3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STGW25M120DF3 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGW25M120DF3 IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. STGW25M120DF3
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: STMicroelectronics IGBT Transistors
Datasheet: STGW25M120DF3 Datasheet (PDF)
Price (USD)
1: USD 19.9996 ea
Line Total: USD 20 
Availability : 0
  
QtyUnit Price
1$ 19.9996
10$ 11.689
30$ 10.5852
90$ 9.6586

Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 600
Multiples : 600
QtyUnit Price
600$ 2.9508


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 7.6079
10$ 5.8136
100$ 5.2406
500$ 4.8831
1000$ 4.5419


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 19.9996
10$ 11.689
30$ 10.5852
90$ 9.6586


Availability 0
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 7.2817
10$ 4.6492
25$ 4.4337
100$ 3.7461
500$ 3.2637
1000$ 3.0379
5000$ 2.7197
10000$ 2.6376


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 6
Multiples : 1
QtyUnit Price
6$ 8.0762
10$ 6.9225
50$ 5.1512
100$ 4.745
200$ 4.55


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 3
Multiples : 1
QtyUnit Price
3$ 13.6289


Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 3
Multiples : 3
QtyUnit Price
3$ 4.2389
10$ 3.1518
25$ 2.9014
100$ 2.8434

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STGW25M120DF3 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGW25M120DF3 and other electronic components in the IGBT Transistors category and beyond.

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STGW25M120DF3 Datasheet Trench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package Features Maximum junction temperature: T = 175 C J 10 s of short-circuit withstand time Low V = 1.85 V (typ.) I = 25 A CE(sat) C Tight parameter distribution 3 2 Positive V temperature coefficient CE(sat) 1 Low thermal resistance TO-247 Soft- and fast-recovery antiparallel diode C(2, TAB) Applications Industrial drives UPS G(1) Solar Welding Description E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive V CE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGW25M120DF3 Product summary Order code STGW25M120DF3 Marking G25M120DF3 Package TO-247 Packing Tube DS10300 - Rev 4 - November 2019 www.st.com For further information contact your local STMicroelectronics sales office.STGW25M120DF3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 1200 V CES GE Continuous collector current at T = 25 C 50 A C I C Continuous collector current at T = 100 C 25 A C (1) I Pulsed collector current 100 A CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage 30 V Continuous forward current at T = 25 C 50 A C I F Continuous forward current at T = 100 C 25 A C (1) I Pulsed forward current 100 A FP P Total power dissipation at T = 25 C 375 W TOT C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance junction-case IGBT 0.4 C/W R thJC Thermal resistance junction-case diode 0.96 C/W R Thermal resistance junction-ambient 50 C/W thJA DS10300 - Rev 4 page 2/16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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