STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT Table 1: General Features Figure 1: Package TYPE V V (Max) I CES CE(sat) C 25C 100C STGW40NC60V 600 V < 2.5 V 50 A HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz 3 LOSSES INCLUDE DIODE RECOVERY 2 ENERGY 1 OFF LOSSES INCLUDE TAIL CURRENT TO-247 LOWER C / C RATIO RES IES NEW GENERATION PRODUCTS WITH Weight: 4.41gr 0.01 TIGHTER PARAMETER DISTRUBUTION 2 Max Clip Pressure: 150 N/mm DESCRIPTION Using the latest high voltage technology based on Figure 2: Internal Schematic Diagram a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Pow- erMESH IGBTs, with outstanding performances. The suffix V identifies a family optimized for high frequency. APPLICATIONS HIGH FREQUENCY INVERTERS SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES UPS MOTOR DRIVERS Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STGW40NC60V GW40NC60V TO-247 TUBE Rev. 10 July 2004 1/10 Obsolete Product(s) - Obsolete Product(s)STGW40NC60V Table 3: Absolute Maximum ratings Symbol Parameter Value Symbol V Collector-Emitter Voltage (V = 0) 600 V CES GS V V Reverse Battery Protection 20 ECR V V Gate-Emitter Voltage 20 GE I A Collector Current (continuous) at 25C ( ) 80 C I A Collector Current (continuous) at 100C ( ) 50 C I (1) Collector Current (pulsed) 200 A CM P Total Dissipation at T = 25C 260 W TOT C Derating Factor 2.08 W/C T Storage Temperature stg 55 to 150 C T Operating Junction Temperature j (1)Pulse width limited by max. junction temperature. Table 4: Thermal Data Min. Typ. Max. Unit Rthj-case Thermal Resistance Junction-case 0.48 C/W Rthj-amb Thermal Resistance Junction-ambient 50 C/W T Maximum Lead Temperature for Soldering Purpose 300 C L (1.6 mm from case, for 10 sec.) ELECTRICAL CHARACTERISTICS (T =25C UNLESS OTHERWISE SPECIFIED) CASE Table 5: Off Symbol Parameter Test Conditions Min. Typ. Max. Unit V Collectro-Emitter Breakdown I = 1 mA, V = 0 600 V BR(CES) C GE Voltage I Collector-Emitter Leakage V = Max Rating CES GE Current (V = 0) 10 A CE Tc=25C Tc=125C 1 mA I Gate-Emitter Leakage V = 20 V , V = 0 100 nA GES GE CE Current (V = 0) CE Table 6: On Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V = V , I = 250 A 3.75 5.75 V GE(th) CE GE C V Collector-Emitter Saturation V = 15 V, I = 40A, Tj= 25C 1.9 2.5 V CE(SAT) GE C Voltage 1.7 V V = 15 V, I = 40A, GE C Tj= 125C ( ) Calculated according to the iterative formula: T T JMAX C I()T = -------------------------------------------------------------------------------------------------- C C R V ()T , I THJ C CESAT()MAX C C 2/10 Obsolete Product(s) - Obsolete Product(s)