STGW45HF60WD 45 A, 600 V ultra fast IGBT Features Improved E at elevated temperature off Low C / C ratio (no cross-conduction RES IES susceptibility) Ultra fast soft recovery antiparallel diode Applications 3 2 1 Welding TO-247 High frequency converters Power factor correction Description The HF family is based on a new advanced Figure 1. Internal schematic diagram planar technology concept to yield an IGBT with more stable switching performance (E ) versus off temperature, as well as lower conduction losses. The W series is a subset of products tailored to high switching frequency operation (over 100 kHz). (1) Table 1. Device summary Order code Marking Package Packaging GW45HF60WDA STGW45HF60WD GW45HF60WDB TO-247 Tube GW45HF60WDC 1. Collector-emitter saturation voltage is classified in group A, B and C, see Table 5: VCE(sat) classification. STMicroelectronics reserves the right to ship from any group according to production availability. April 2010 Doc ID 15593 Rev 3 1/12 www.st.com 12 Electrical ratings STGW45HF60WD 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 600 V CES GE (1) I Continuous collector current at T = 25 C 70 A C C (1) I Continuous collector current at T = 100 C 45 A C C (2) I Pulsed collector current 150 A CP (3) I Turn-off latching current 80 A CL V Gate-emitter voltage 20 V GE I Diode RMS forward current at T = 25 C 30 A F C I Surge not repetitive forward current t = 10 ms sinusoidal 120 A FSM p P Total dissipation at T = 25 C 250 W TOT C T Storage temperature stg 55 to 150 C T Operating junction temperature j 1. Calculated according to the iterative formula: T T jm()ax C I()T = ------------------------------------------------------------------------------------------------------- C C R V ()T , I()T thj c CE()sat()max jm()ax C C 2. Pulse width limited by maximum junction temperature and turn-off within RBSOA 3. V = 80% (V ), V = 15 V, R = 10 , T = 150 C CLAMP CES GE G J Table 3. Thermal data Symbol Parameter Value Unit Thermal resistance junction-case IGBT 0.5 C/W R thj-case Thermal resistance junction-case diode 1.5 C/W R Thermal resistance junction-ambient 50 C/W thj-amb 2/12 Doc ID 15593 Rev 3