STGW60H65DF STMicroelectronics

STGW60H65DF 60 A, 650 V field stop trench gate IGBT with very fast diode Datasheet production data Features High speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time 3 2 Very fast soft recovery antiparallel diode 1 Lead free package TO-247 Applications Photovoltaic inverters Uninterruptible power supply Figure 1. Internal schematic diagram Welding Power factor correction High switching frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive V temperature coefficient and very CE(sat) tight parameter distribution result in easier paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW60H65DF GW60H65DF TO-247 Tube January 2013 Doc ID 023011 Rev 4 1/13 This is information on a product in full production. www.st.com 13Electrical ratings STGW60H65DF 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 650 V CES GE I Continuous collector current at T = 25 C 120 A C C I Continuous collector current at T = 100 C 60 A C C (1) I Pulsed collector current 240 A CP V Gate-emitter voltage 20 V GE I Continuous forward current at T = 25 C 120 A F C I Continuous forward current at T = 100 C 60 A F C (1) I Pulsed forward current 240 A FP P Total dissipation at T = 25 C 360 W TOT C Short-circuit withstand time at V = 400 V, CC t 6s SC V = 15 V GE T Storage temperature range STG - 55 to 150 C T Operating junction temperature J 1. Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.35 C/W thJC R Thermal resistance junction-case diode 1.38 C/W thJC R Thermal resistance junction-ambient 50 C/W thJA 2/13 Doc ID 023011 Rev 4