Product Information

STGWT40H65DFB

STGWT40H65DFB electronic component of STMicroelectronics

Datasheet
IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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1: USD 5.56 ea
Line Total: USD 5.56

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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MOQ : 600
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STGWT40H65DFB
STMicroelectronics

600 : USD 3.913
6000 : USD 3.757
60000 : USD 2.8392
300000 : USD 2.3517
600000 : USD 2.3478

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STGWT40H65DFB
STMicroelectronics

1 : USD 6.6514
10 : USD 5.0784
100 : USD 3.8616
500 : USD 3.5912
1000 : USD 3.4694

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Ships to you between Tue. 28 May to Mon. 03 Jun

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STGWT40H65DFB
STMicroelectronics

20 : USD 3.483
80 : USD 3.354
300 : USD 3.225
500 : USD 3.225
1000 : USD 3.225

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Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 300
Multiples : 300

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STGWT40H65DFB
STMicroelectronics

300 : USD 3.2283

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Tue. 04 Jun to Fri. 07 Jun

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STGWT40H65DFB
STMicroelectronics

1 : USD 7.9873
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30 : USD 7.6684
100 : USD 7.5403

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Ships to you between Mon. 03 Jun to Wed. 05 Jun

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STGWT40H65DFB
STMicroelectronics

1 : USD 5.56
10 : USD 3.4382
100 : USD 2.7505
500 : USD 2.4426
1000 : USD 2.0629
5000 : USD 1.8782
10000 : USD 1.8371

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Ships to you between Tue. 28 May to Mon. 03 Jun

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STGWT40H65DFB
STMicroelectronics

5 : USD 3.4669
10 : USD 3.1692
100 : USD 2.9118
500 : USD 2.7255

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

STGWT40H65DFB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features TAB Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current 3 2 Low saturation voltage: V = 1.6 V (typ.) I = 40 A CE(sat) C 1 TO-3P Tight parameter distribution Safe paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Very fast soft recovery antiparallel diode Applications Photovoltaic inverters High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGWT40H65DFB Product summary Order code STGWT40H65DFB Marking GWT40H65DFB Package TO-3P Packing Tube DS11705 - Rev 2 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STGWT40H65DFB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 80 C I A C Continuous collector current at T = 100 C 40 C (1) I Pulsed collector current 160 A CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage 30 Continuous forward current at T = 25 C 80 C I A F Continuous forward current at T = 100 C 40 C (1) I Pulsed forward current 160 A FP P Total power dissipation at T = 25 C 283 W TOT C T Storage temperature range - 55 to 150 STG C T Operating junction temperature range - 55 to 175 J 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.53 thJC R Thermal resistance junction-case diode 1.14 C/W thJC R Thermal resistance junction-ambient 50 thJA DS11705 - Rev 2 page 2/15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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