STHU32N65DM6AG Datasheet Automotive-grade N-channel 650 V, 83 m typ., 37 A MDmesh DM6 Power MOSFET in an HU3PAK package Features V R max. I Order code DS DS(on) D TAB STHU32N65DM6AG 650 V 97 m 37 A 7 AEC-Q101 qualified 1 Fast-recovery body diode HU3PAK Lower R x area vs previous generation DS(on) Low gate charge, input capacitance and resistance 100% avalanche tested Drain(TAB) Extremely dv/dt ruggedness Zener-protected Excellent switching performance thanks to the extra driving source pin Gate(1) Applications Switching applications Driver Power source (2) source (3, 4, 5, 6, 7) Description N-chG1DS2PS34567DTABZ This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q ), recovery time (t ) and excellent rr rr improvement in R per area with one of the most effective switching behaviors DS(on) available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STHU32N65DM6AG Product summary Order code STHU32N65DM6AG Marking 32N65DM6 Package HU3PAK Packing Tape and reel DS13782 - Rev 3 - November 2021 www.st.com For further information contact your local STMicroelectronics sales office.STHU32N65DM6AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 37 C (1) I A D Drain current (continuous) at T = 100 C 23 C (2) I Drain current (pulsed) 120 A DM P Total power dissipation at T = 25 C 320 W TOT C (3) dv/dt Peak diode recovery voltage slope 100 V/ns (3) Peak diode recovery current slope 1000 A/s di/dt (4) dv/dt MOSFET dv/dt ruggedness 100 V/ns T Operating junction temperature range J -55 to 150 C T Storage temperature range stg 1. Referred to TO-247 package. 2. Pulse width limited by safe operating area. 3. I 37 A, V (peak) < V , V = 400 V. SD DS (BR)DSS DD 4. V 520 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 0.51 thJC C/W (1) R Thermal resistance, junction-to-board 30 thJB 1. 1. When mounted on an 1-inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or non-repetitive (pulse width limited by T max) 6 A AR J E Single pulse avalanche energy (starting T = 25 C, I = I , V = 100 V) 778 mJ AS J D AR DD DS13782 - Rev 3 page 2/15