STP52P3LLH6 STMicroelectronics

STP52P3LLH6 P-channel -30 V, 0.01 typ., -52 A, STripFET H6 Power MOSFET in TO-220 package Datasheet - production data Order codes V R max I P DSS DS(on) D TOT STP52P3LLH6 -30 V 0.012 -52 A 70 W Very low on-resistance Very low gate charge High avalanche Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET Figure 1: Internal schematic diagram developed using the STripFET H6 technology with a new trench gate structure. The resulting D(2, TAB) Power MOSFET exhibits very low RDS(on) in all packages. G(1) S(3) AM11258v1 Features Table 1: Device summary Order codes Marking Package Packaging STP52P3LLH6 52P3LLH6 TO-220 Tube October 2015 DocID027236 Rev 2 1/13 www.st.com This is information on a product in full production. Contents STP52P3LLH6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220 package information ........................................................... 10 5 Revision history ............................................................................ 12 2/13 DocID027236 Rev 2