STPS20SM60S Power Schottky rectifier Features A K High current capability A Avalanche rated K K Low forward voltage drop High frequency operation A A K A Description A 2 2 D PAK I PAK The STPS20SM60S is a single Schottky diode, STPS20SM60SG-TR STPS20SM60SR suited for high frequency switch mode power supply. K 2 2 Packaged in TO-220AB, I PAK and D PAK, this device is intended to be used in notebook, game station and desktop adapters, providing in these A aplications a good efficiency at both low and high K A load. TO-220AB STPS20SM60ST Table 1. Device summary Symbol Value (a) Figure 1. Electrical characteristics I 20 A F(AV) V 60 V RRM I V V (typ) 0.410 VForwar F I 2 x I T (max) 150 C O X j IF I O X VRRM V V AR R V I R V V V V To F(Io) F F(2xIo)Revers I AR a. V and I must respect the reverse safe ARM ARM operating area defined in Figure 12. V and I are AR AR pulse measurements (t < 1 s). V , I , V and V , p R R RRM F are static characteristics October 2011 Doc ID 022058 Rev 1 1/9 www.st.com 9 Obsolete Product(s) - Obsolete Product(s)Characteristics STPS20SM60S 1 Characteristics Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited at T = 25 C, unless otherwise specified) amb Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Forward rms current 60 A F(RMS) I Average forward current, = 0.5 T = 130 C Per package 20 A F(AV) c I Surge non repetitive forward current t = 10 ms sine-wave 400 A FSM p (1) P Repetitive peak avalanche power T = 25 C, t = 1 s 18400 W ARM j p Maximum repetitive peak (2) V t < 1 s, T < 150 C, I < 69 A 80 V ARM p j AR avalanche voltage Maximum single-pulse (2) V t < 1 s, T < 150 C, I < 69 A 80 V ASM p j AR peak avalanche voltage T Storage temperature range -65 to +175 C stg (3) T Maximum operating junction temperature 150 C j 1. For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. See Figure 12 dPtot 1 3. < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Value Unit R Junction to case 1.3 C/W th(j-c) Table 4. Static electrical characteristics (terminals 1 and 3 short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C -20 85 A Reverse leakage j (1) I V = V R R RRM current T = 125 C - 15 50 mA j T = 25 C - 0.495 0.535 j I = 10 A F T = 125 C - 0.410 0.460 j (2) V Forward voltage drop V F T = 25 C - 0.570 0.630 j I = 20 A F T = 125 C - 0.510 0.580 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 0.430 x I + 0.0075 x I F(AV) F (RMS) 2/9 Doc ID 022058 Rev 1 Obsolete Product(s) - Obsolete Product(s)