STT13005-K STMicroelectronics

STT13005 High voltage fast-switching NPN power transistor Features High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications Electronic ballast for fluorescent lighting 1 2 Flyback and forward single transistor low 3 power converters SOT-32 Description Figure 1. Internal schematic diagram The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Table 1. Device summary Order codes Marking Package Packaging STT13005 T13005 SOT-32 Tube STT13005-K T13005 SOT-32 Bag November 2009 Doc ID 13613 Rev 3 1/10 www.st.com 10Electrical ratings STT13005 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Emitter-base voltage (I = 0) 9 V EBO C I Collector current 2 A C I Collector peak current (t < 5 ms) 4 A CM P I Base current 1 A B I Base peak current (t < 5 ms) 2 A BM P P Total dissipation at T = 25 C 45 W tot c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case Max 2.8 C/W thJC 2/10 Doc ID 13613 Rev 3