Product Information

STT3P2UH7

STT3P2UH7 electronic component of STMicroelectronics

Datasheet
MOSFET P-channel 20 V, 0.087 Ohm typ., 3 A STripFET H7 Power MOSFET in a SOT23-6L package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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STT3P2UH7
STMicroelectronics

1 : USD 0.7677
10 : USD 0.6424
100 : USD 0.4814
500 : USD 0.353
1000 : USD 0.2728
N/A

Obsolete
0 - WHS 2

MOQ : 3000
Multiples : 3000

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STT3P2UH7
STMicroelectronics

3000 : USD 0.2362
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

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STT3P2UH7
STMicroelectronics

1 : USD 0.3446
30 : USD 0.2987
75 : USD 0.2658
150 : USD 0.247
375 : USD 0.2458
1500 : USD 0.2446
N/A

Obsolete
0 - WHS 4


Multiples : 6000

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STT3P2UH7
STMicroelectronics

N/A

Obsolete
0 - WHS 5

MOQ : 1
Multiples : 1

Stock Image

STT3P2UH7
STMicroelectronics

1 : USD 1.5879
10 : USD 0.7584
100 : USD 0.4123
500 : USD 0.3243
1000 : USD 0.2507
3000 : USD 0.2273
6000 : USD 0.2139
N/A

Obsolete
0 - WHS 6

MOQ : 39
Multiples : 1

Stock Image

STT3P2UH7
STMicroelectronics

39 : USD 0.4423
50 : USD 0.3834
100 : USD 0.3099
250 : USD 0.2867
500 : USD 0.2709
1000 : USD 0.2668
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

STT3P2UH7 P-channel 20 V, 0.087 typ., 3 A STripFET H7 Power MOSFET in a SOT23-6L package Datasheet - production data Features Order code V R max I DS DS(on) D STT3P2UH7 20 V 0.1 4.5 3 A Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness SOT23-6L Applications Switching applications Figure 1: Internal schematic diagram Description This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low on- resistance. The device also offers ultra-low capacitances for higher switching frequency operations. Table 1: Device summary Order code Marking Package Packaging STT3P2UH7 3L2U SOT23-6L Tape and reel For the P-channel Power MOSFET, current and voltage polarities are reversed. September 2016 DocID025027 Rev 3 1/13 www.st.com This is information on a product in full production. Contents STT3P2UH7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package mechanical data ............................................................. 10 4.1 SOT23-6L package mechanical data .............................................. 10 5 Revision history ............................................................................ 12 2/13 DocID025027 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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