STT3P2UH7 STMicroelectronics

STT3P2UH7 P-channel 20 V, 0.087 typ., 3 A STripFET H7 Power MOSFET in a SOT23-6L package Datasheet - production data Features Order code V R max I DS DS(on) D STT3P2UH7 20 V 0.1 4.5 3 A Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness SOT23-6L Applications Switching applications Figure 1: Internal schematic diagram Description This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low on- resistance. The device also offers ultra-low capacitances for higher switching frequency operations. Table 1: Device summary Order code Marking Package Packaging STT3P2UH7 3L2U SOT23-6L Tape and reel For the P-channel Power MOSFET, current and voltage polarities are reversed. September 2016 DocID025027 Rev 3 1/13 www.st.com This is information on a product in full production. Contents STT3P2UH7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package mechanical data ............................................................. 10 4.1 SOT23-6L package mechanical data .............................................. 10 5 Revision history ............................................................................ 12 2/13 DocID025027 Rev 3