Product Information

STTH806G-TR

STTH806G-TR electronic component of STMicroelectronics

Datasheet
Rectifiers Turbo 2 RECTIFIER Ultrafast Hi Vltg

Manufacturer: STMicroelectronics
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Price (USD)

1000: USD 0.4764 ea
Line Total: USD 476.4

12610 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
12610 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1000
Multiples : 1000

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STTH806G-TR
STMicroelectronics

1000 : USD 0.4764
2000 : USD 0.4651
5000 : USD 0.4559

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
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Product
Brand
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Height
Length
Width
Cnhts
Hts Code
Mxhts
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STTH806 Turbo 2 ultrafast - high voltage rectifier Main product characteristics A K K I 8 A F(AV) V 600 V RRM A T 175 C j NC 2 V (typ) 1.1 V F D PAK STTH806G t (max) 35 ns rr Features and benefits A A Ultrafast switching K K Low reverse current TO-220AC TO-220AC Ins STTH806D STTH806DIRG Low thermal resistance Reduces conduction and switching losses Insulated package TO-220AC Ins Order codes Insulated voltage: 2500 V RMS Part Number Marking Typical package capacitance: 7 pF STTH806G STTH806G Description STTH806G-TR STTH806G STTH806D STTH806D The STTH806 uses ST Turbo2 600 V technology. STTH806DIRG STTH806DI This device is specially suited for use in switching power supplies, and industrial applications. Table 1. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM 2 TO-220AC, D PAK 30 A I RMS forward current F(RMS) TO-220 Ins 24 A 2 T = 140 C TO-220AC, D PAK 8 A c I Average forward current, = 0.5 F(AV) T = 120 C TO-220 Ins 8 A c I Surge non repetitive forward current t = 10 ms Sinusoidal 90 A FSM p T Storage temperature range -65 to + 175 C stg (1) T Maximum operating junction temperature 175 C j dP 1. condition to avoid thermal runaway for a diode on its own heatsink tot 1 --------------- < -------------------------- dT R j th()j a August 2006 Rev 2 1/9 www.st.comCharacteristics STTH806 1 Characteristics Table 2. Thermal parameters Symbol Parameter Value Unit 2 TO-220AC, D PAK 2.5 R Junction to case C/W th(j-c) TO-220AC Ins 4 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 8 j (1) I Reverse leakage current V = V A R R RRM T = 150 C 20 200 j T = 25 C 1.85 j (2) V Forward voltage drop I = 8 A V F F T = 150 C 1.10 1.40 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 1.07 x I + 0.041 I F(AV) F (RMS) Table 4. Dynamic characteristics Test conditions Symbol Parameter Min. Typ Max. Unit I = 0.5 A, I = 0.25 A, I = 1 A, F rr R 35 T = 25 C j t Reverse recovery time ns rr I = 1 A, dI /dt = -50 A/s, F F 40 55 V = 30 V, T = 25 C R j I = 8 A, dI /dt = -100 A/s, F F I Reverse recovery current 4.5 6.5 RM V = 400 V, T = 25 C R j I = 8 A dI /dt = 100 A/s F F t Forward recovery time 200 ns fr V = 1.1 x V , T = 25 C FR Fmax j I = 8 A dI /dt = 100 A/s F F V Forward recovery voltage 3.5 V FP V = 1.1 x V , T = 25 C FR Fmax j 2/9

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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