Product Information

STTH806TTI

STTH806TTI electronic component of STMicroelectronics

Datasheet
Rectifiers 8.0 Amp 600 Volt

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0553 ea
Line Total: USD 1.06

6024 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6024 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

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STTH806TTI
STMicroelectronics

1 : USD 1.0553

916 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 7
Multiples : 1

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STTH806TTI
STMicroelectronics

7 : USD 1.1137

6024 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 8
Multiples : 1

Stock Image

STTH806TTI
STMicroelectronics

8 : USD 1.0553

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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STTH806TTI TURBOSWITCH Tandem 600V ULTRA-FAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS I 8A F(AV) 12 3 V 600 V (in series) RRM Tj (max) 150 C V (max) 2.6 V F I (typ.) 4 A RM 3 2 1 FEATURES AND BENEFITS Insulated TO-220AB n ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING DESCRIPTION CONDITIONS. The TURBOSWITCH H is an ultra high n DESIGNED FOR HIGH DI/DT OPERATION. performance diode composed of two 300V dice in n ULTRA-FAST RECOVERY CURRENT TO series. TURBOSWITCH H family drastically cuts COMPETE WITH GaAs DEVICES. SIZE losses in the associated MOSFET when run at DIMINUTION OF MOSFET AND HEATSINKS high dI /dt. F ALLOWED. n INTERNAL CERAMIC INSULATED PACKAGE ALLOWS FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK. n MATCHED DIODES FOR TYPICAL PFC APPLICATION WITHOUT VOLTAGE BALANCE NETWORK. n INSULATED VERSION: : Insulated voltage = 2500 V (RMS) Capacitance = 7 pF ABSOLUTE RATINGS (limiting values for both diodes in series) Symbol Parameter Value Unit V 600 V RRM Repetitive peak reverse voltage I 14 A F(RMS) RMS forward current I 80 A FSM Surge non repetitive forward current tp = 10 ms sinusoidal T -65 +150 C stg Storage temperature range Tj + 150 C Maximum operating junction temperature TM: TURBOSWITCH is a trademark of STMicroelectronics February 2003 - Ed: 4B 1/5STTH806TTI THERMAL AND POWER DATA Symbol Parameter Test conditions Value Unit R 5 C/W th (j-c) Junction to case thermal resistance Per diode R 0.2 th (c) Coupling R 2.6 th (j-c) Junction to case thermal resistance Total P 27 W 1 Conduction power dissipation for I =8A = 0.5 F(AV) both diodes Tc = 80C STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol Parameter Tests Conditions Min. Typ. Max. Unit I * 10 A R Reverse leakage cur- V =V Tj = 25C R RRM rent 15 100 Tj = 125C V ** 3.6 V F Forward voltage drop I = 8A Tj=25C F 2.1 2.6 Tj = 125C Pulse test : * tp=5ms, <2% ** tp = 380 s, <2% To evaluate the maximum conduction losses use the following equation : 2 P=1.8xI + 0.1 I F(AV) F (RMS) RECOVERY CHARACTERISTICS Symbol Tests Conditions Min. Typ. Max. Unit trr 13 ns I = 0.5 A Irr = 0.25 A I = 1 A Tj = 25C F R 30 I =1A dI /dt=-50A/sV =30V F F R I 4 5.5 A RM V = 400 V I =8A dI /dt = -200 A/s Tj = 125C R F F S 0.4 - factor TURN-ON SWITCHING CHARACTERISTICS Symbol Tests Conditions Min. Typ. Max. Unit tfr 200 ns I =8A dI /dt = 100 A/s, Tj = 25C F F measured at 1.1 x V max F V 7V FP I =8A dI /dt = 100 A/s Tj = 25C F F 2/5

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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