Product Information

THBT20011D

THBT20011D electronic component of STMicroelectronics

Datasheet
STMicroelectronics TVS Diode Arrays 200V 50uA OV Prot

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Warehouse 1

MOQ : 1
Multiples : 1

Stock Image

THBT20011D
STMicroelectronics

1 : USD 2.5918
10 : USD 2.1968
100 : USD 1.7602
500 : USD 1.5547
1000 : USD 1.386
2500 : USD 1.3498
5000 : USD 1.3498
10000 : USD 1.3017
25000 : USD 1.2534
N/A

Obsolete
0 - Warehouse 2

MOQ : 38
Multiples : 1

Stock Image

THBT20011D
STMicroelectronics

38 : USD 1.645
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Peak Surge Current
Height
Length
Type
Width
Brand
Mounting Style
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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THBT15011, THBT20011, THBT27011 Tripolar overvoltage protection for telecom line Features bidirectional crowbar protection between TIP and GND, RING and GND and between TIP and RING peak pulse current: I = 30 A for 10/1000 s surge PP holding current: I = 150 mA H SO-8 Complies with Bellcore standard Figure 1. Schematic diagram TR-NWT-001089-Core, (second level) with line series resistors: 10/1000 s, 1000 V 2/10 s, 2500 V (first level) TIP 1 8 TIP 2/10 s, 5000 V GND 2 7 GND Description GND GND 3 6 Dedicated to telecommunication equipment RING 4 5 RING protection, these devices provide a triple bidirectional protection function. They ensure the same protection capability with the same breakdown voltage both in longitudinal mode and transversal mode. A particular attention has been given to the internal wire bonding. The 4-point configuration ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transient overvoltages. Dynamic characteristics have been defined for several types of surges to meet the SLIC maximum ratings. December 2010 Doc ID 3767 Rev 9 1/11 www.st.com 11Characteristics THBT15011, THBT20011, THBT27011 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit (1) (2) I Peak pulse current 10 / 1000 s 30 A PP t = 10 ms 8 Non repetitive surge peak on-state current p I A TSM (F = 50 Hz) t = 1 s 3.5 Tstg - 40 to + 150 Storage temperature range C Maximum junction temperature Tj 150 T Maximum lead temperature for soldering during 10s 260 C L 1. For pulse waveform see Figure 2 2. See Figure 7: Test circuit 4 for I parameter PP Figure 2. Pulse waveform %I PP Repetitive peak pulse current 10 0 t = rise time (s) r t = pulse duration time (s) p 50 0 t t t r p Figure 3. Surge peak current versus overload duration ITSM(A) 10 F=50Hz 9 Tj initial=25C 8 7 6 5 4 3 2 1 t(s) 0 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 Table 2. Thermal resistance Symbol Parameter Value Unit R Junction to ambient 170 C/W th(j-a) 2/11 Doc ID 3767 Rev 9

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max
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