X-On Electronics has gained recognition as a prominent supplier of TMMBAT42FILM Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. TMMBAT42FILM Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.
We are delighted to provide the TMMBAT42FILM from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TMMBAT42FILM and other electronic components in the Schottky Diodes & Rectifiers category and beyond.
TMMBAT42 - TMMBAT43 Small signal Schottky diodes Datasheet - production data Description General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges. 0,1,0(/) Features Very small conduction losses Negligible switching losses Low forward voltage drop July 2015 DocID3497 Rev 3 1/7 This is information on a product in full production. www.st.comCharacteristics TMMBAT42 - TMMBAT43 1 Characteristics Table 1. Absolute maximum ratings at 25 C unless otherwise specified Symbol Parameter Value Unit V Repetitive peak reverse voltage 30 V RRM I Forward continuous current Tl = 25 C 200 mA F t 1 s p I Repetitive peak forward current 500 mA FRM 0.5 I Surge non repetitive forward current t = 10 ms 4 A FSM p P Power dissipation Tl = 65 C 200 mW tot T Storage temperature range -65 to + 150 C stg T Operating junction temperature range -65 to + 125 C j T Maximum temperature for soldering during 15 s 260 C L Table 2. Thermal resistance Symbol Parameter Value Unit R Junction to leads 300 C/W th(j-l) Table 3. Static electrical characteristics Symbol Test conditions Min. Typ. Max. Unit V T = 25 C I 100 A 30 - V BR j R = T = 25 C I = 200 mA All types - 1 j F T = 25 C I =10 mA -0.4 j F TMMBAT42FILM (1) V T = 25 C I = 50 mA - 0.65 V F j F T = 25 C I = 2 mA 0.26 - 0.33 j F TMMBAT43FILM T = 25 C I =15 mA - 0.45 j F T = 25 C, V = 25 V - 0.5 j R (1) I A R T = 100 C, V = 25 V - 100 j R 1. Pulse test: t = 380 s < 2% p Table 4. Dynamic characteristics Symbol Test conditions Min. Typ. Max. Unit CT = 25 C V 1 V f = 1 MHz 7 pF j R = T = 25 C I =10 mA I = 10 mA I = 1 mA j F R RR t 5ns rr R = 100 L 2/7 DocID3497 Rev 3