Product Information

TMMBAT46FILM

TMMBAT46FILM electronic component of STMicroelectronics

Datasheet
Diode: Schottky rectifying; SMD; 100V; 0.15A; MiniMELF; Ufmax:1V
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.0385 ea
Line Total: USD 96.25

310400 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 2500  Multiples: 2500
Pack Size: 2500

 More Buying Options & Price Grid(s)

Availability Price Quantity
4850 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2500
Multiples : 2500

Stock Image

TMMBAT46FILM
STMicroelectronics

2500 : USD 0.0387
7500 : USD 0.0387
12500 : USD 0.0387
37500 : USD 0.0387
62500 : USD 0.0387

24046 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 10
Multiples : 10

Stock Image

TMMBAT46FILM
STMicroelectronics

10 : USD 0.0949
100 : USD 0.0728
330 : USD 0.0507
900 : USD 0.0481

310400 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2500
Multiples : 2500

Stock Image

TMMBAT46FILM
STMicroelectronics

2500 : USD 0.0385

Read More Specifications

     
Manufacturer
Product Category
Case
Mounting
Semiconductor Structure
Kind Of Package
Type Of Diode
Max Load Current
Max Forward Impulse Current
Max Forward Voltage
Max Off-State Voltage
Load Current
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Additional Infomation About Product

TMMBAT 46 SMALL SIGNAL SCHOTTKY DIODE MINIMELF (Glass) DESCRIPTION General purpose, metal to silicon diode featuring high breakdown voltage low turn-on voltage. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V Repetitive Peak Reverse Voltage 100 V RRM I Forward Continuous Current T = 25 C 150 mA F l t 1s 350 mA p IFRM Repetitive Peak Fordware Current 0.5 I Surge non Repetitive Forward Current t = 10ms 750 mA FSM p 150 mW Ptot Power Dissipation T = 80 C l Tstg Storage and Junction Temperature Range - 65 to + 150 C T - 65 to + 125 C j T Maximum Temperature for Soldering during 15s 260 C L THERMAL RESISTANCE Symbol Test Conditions Value Unit R Junction-leads 300 C/W th(j-l) August 1999 Ed: 1A 1/4TMMBAT 46 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit V T = 25CI = 100 A 100 V BR j R V * T = 25 C I = 0.1mA 0.25 V F F j I = 10mA 0.45 Tj = 25C F T = 25 C I = 250mA 1 F j I * T = 25 C V = 1.5V 0.5 A R R j 5 T = 60C j V = 10V 0.8 T = 25C R j 7.5 T = 60C j V = 50V 2 T = 25C R j 15 T = 60C j V = 75V 5 T = 25C j R 20 T = 60C j DYNAMIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit C T = 25CV = 0V f = 1MHz 10 pF j R T = 25CV = 1V 6 j R * Pulse test: tp 300s < 2%. Figure 1. Forward current versus forward Figure 2. Forward current versus forward voltage at different temperatures (typical voltage (typical values). values). 2/4

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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