TQM110NB04DCR Taiwan Semiconductor AUTOMOTIVE Dual N-Channel 40V 175C MOSFET FEATURES PRODUCT SUMMARY AEC-Q101 Qualified PARAMETER VALUE UNIT 100% UIS and R Tested g V 40 V DS 175C Operating Junction Temperature V = 10V 11 GS Wettable Flank Package R (max) m DS(on) V = 7V 17.2 GS RoHS Compliant Halogen-free according to IEC 61249-2-21 Q g 26 nC APPLICATIONS 12V Automotive Systems Solenoid and Motor Control Automotive Transmission Control DC-DC Converters PDFN56U Dual Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 40 V DS Gate-Source Voltage V 20 V GS T = 25C 50 C (Note 1) Continuous Drain Current I A D T = 25C 10 A Pulsed Drain Current I 200 A DM (Note 2) Single Pulse Avalanche Current I 17 A AS (Note 2) Single Pulse Avalanche Energy E 43 mJ AS T = 25C 58 C Total Power Dissipation P W D T = 125C 19 C T = 25C 2.5 A Total Power Dissipation P W D T = 125C 0.8 A Operating Junction and Storage Temperature Range T , T - 55 to +175 C J STG THERMAL RESISTANCE PARAMETER SYMBOL MAXIMUM UNIT Thermal Resistance Junction to Case R 2.6 C/W JC Thermal Resistance Junction to Ambient R 61 C/W JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JC CA 2 determined by the users board design. The R limit presented here is based on mounting on a 1 in pad of 2 oz copper. JA 1 Version: A2006 TQM110NB04DCR Taiwan Semiconductor ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 40 -- -- GS D DSS V Gate Threshold Voltage V = V , I = 250A V 1.8 2.5 3.8 V GS DS D GS(TH) Gate-Source Leakage Current V = 20V, V = 0V I -- -- 100 GS DS GSS nA V = 0V, V = 40V -- -- 1 GS DS V = 0V, V = 40V GS DS -- -- 100 Drain-Source Leakage Current I A T = 125C DSS J V = 0V, V = 40V GS DS -- -- 500 T = 175C J V = 10V, I = 10A GS D -- 8 11 V = 10V, I = 10A, GS D -- 14 19 Drain-Source On-State Resistance T = 125C J R m DS(on) (Note 3) V = 10V, I = 10A, GS D -- 17 23 T = 175C J V = 7V, I = 8A -- 9 17.2 GS D (Note 3) V = 10V, I = 10A -- 32 -- Forward Transconductance DS D g S fs (Note 4) Dynamic V = 10V, V = 20V, GS DS Total Gate Charge Q -- 26 -- g I = 10A D Total Gate Charge Q -- 19 -- g nC V = 7V, V = 20V, GS DS Gate-Source Charge Q -- 6 -- gs I = 8A D Gate-Drain Charge Q -- 8 -- gd Input Capacitance C -- 1354 -- iss V = 0V, V = 20V, GS DS Output Capacitance C -- 147 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 94 -- rss Gate Resistance f = 1.0MHz R 0.6 2 4 g (Note 4) Switching Turn-On Delay Time t -- 6 -- d(on) Rise Time t -- 10 -- r V = 10V, V = 20V, GS DS ns Turn-Off Delay Time I = 10A, R = 2 t -- 16 -- D G d(off) Fall Time t -- 7 -- f Source-Drain Diode (Note 3) Diode Forward Voltage V -- -- 1.2 V V = 0V, I = 10A GS S SD Reverse Recovery Time t -- 15 -- ns rr I = 10A, S Reverse Recovery Charge Q -- 8 -- nC di/dt = 100A/s rr Notes: 1. Silicon limited current only. 2. L = 0.3mH, V = 10V, V = 25V, R = 50, I = 17A, Starting T = 25C GS DD G AS J 3. Pulse test: Pulse Width 300s, duty cycle 2%. 4. Switching time is essentially independent of operating temperature. 2 Version: A2006